Integrated Device Technology 5.0V 2K x 8 Asynchronous Static RAM 6116LA25TDB

Description
The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power ( LA ) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL -compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.
Datasheet
Description
The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power ( LA ) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL -compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.
Datasheet

Suppliers

Company
Product
Description
Supplier Links
5.0V 2K x 8 Asynchronous Static RAM - 6116LA25TDB - Integrated Device Technology
San Jose, CA, USA
5.0V 2K x 8 Asynchronous Static RAM
6116LA25TDB
5.0V 2K x 8 Asynchronous Static RAM 6116LA25TDB
The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power ( LA ) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL -compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.

The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power ( LA ) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL -compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.

Supplier's Site Datasheet

Technical Specifications

  Integrated Device Technology
Product Category Memory Chips
Product Number 6116LA25TDB
Product Name 5.0V 2K x 8 Asynchronous Static RAM
Memory Category SRAM Chip
Access Time 25 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 16 kbits
Number of Words 2 k
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 592575-001-00 - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers
Flash Memory - 1882745 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Number of Words 512 k
Bits per Word 8 bits
View Details
Memory - 54F189LLQB - Quarktwin Technology Ltd.
Texas Instruments
Specs
Memory Category RAM
Access Time 32 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
2 suppliers
Memory - 71024S20TYGI - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 20 ns
Density 1000 kbits
View Details