Integrated Device Technology 5.0V 2K x 8 Asynchronous Static RAM 6116LA20TPGI

Description
The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power ( LA ) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL -compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.
Datasheet
Description
The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power ( LA ) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL -compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.
Datasheet

Suppliers

Company
Product
Description
Supplier Links
5.0V 2K x 8 Asynchronous Static RAM - 6116LA20TPGI - Integrated Device Technology
San Jose, CA, USA
5.0V 2K x 8 Asynchronous Static RAM
6116LA20TPGI
5.0V 2K x 8 Asynchronous Static RAM 6116LA20TPGI
The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power ( LA ) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL -compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.

The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power ( LA ) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL -compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.

Supplier's Site Datasheet
Memory - 6116LA20TPGI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 16Kbit Parallel 20 ns 24-PDIP

SRAM - Asynchronous Memory IC 16Kbit Parallel 20 ns 24-PDIP

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Technical Specifications

  Integrated Device Technology Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number 6116LA20TPGI 6116LA20TPGI
Product Name 5.0V 2K x 8 Asynchronous Static RAM Memory
Memory Category SRAM Chip SRAM; SRAM Chip
Access Time 20 ns 20 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 16 kbits 16 kbits
Number of Words 2 k
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