Integrated Device Technology 5.0V 2K x 8 Asynchronous Static RAM 6116LA20SOG8

Description
The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power ( LA ) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL -compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.
Datasheet
Description
The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power ( LA ) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL -compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.
Datasheet

Suppliers

Company
Product
Description
Supplier Links
5.0V 2K x 8 Asynchronous Static RAM - 6116LA20SOG8 - Integrated Device Technology
San Jose, CA, USA
5.0V 2K x 8 Asynchronous Static RAM
6116LA20SOG8
5.0V 2K x 8 Asynchronous Static RAM 6116LA20SOG8
The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power ( LA ) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL -compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.

The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power ( LA ) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL -compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.

Supplier's Site Datasheet

Technical Specifications

  Integrated Device Technology
Product Category Memory Chips
Product Number 6116LA20SOG8
Product Name 5.0V 2K x 8 Asynchronous Static RAM
Memory Category SRAM Chip
Access Time 20 ns
Operating Temperature 0 to 70 C (32 to 158 F)
Density 16 kbits
Number of Words 2 k
Unlock Full Specs
to access all available technical data

Similar Products

SDRAM - 2420769 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 20 ns
Number of Words 128000 k
View Details
Memory - CY62126DV30L-55BVXET - Quarktwin Technology Ltd.
Infineon Technologies AG
Specs
Memory Category SRAM; SRAM Chip
Access Time 55 ns
Operating Temperature -40 to 125 C (-40 to 257 F)
View Details
2 suppliers
 - 27S03ALM/B - Rochester Electronics
Specs
Memory Category SRAM Chip
Density 0 kbits
Package Type CLCC20
View Details
4 suppliers
Logic - Logic - FIFOs Memory - CD54HCT40105F3A - 1160037-CD54HCT40105F3A - Win Source Electronics
Specs
Memory Category FIFO
View Details
2 suppliers