IGN2729M400R2 is a GaN-on-SiC RF power transistor designed for S-band radar systems, delivering 400 W peak output power at 2.7-2.9 GHz with 18 dB typical gain and 63% efficiency under 100 ms pulse, 10% duty cycle conditions. It operates from a 50 V drain supply and is housed in a metal-based flange package. The device is rated for a channel temperature up to 225°C and exhibits 0.33°C/W typical thermal resistance. It supports a 10:1 VSWR mismatch and is RoHS and REACH compliant. The input and output impedances are pre-matched for 50 Ω systems.
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 2251-IGN2729M400R2-ND |
| Product Name | RF FETs, MOSFETs |
