Insignis Technology Corporation Memory NDS76PBA-20ET TR

Description
SDRAM Memory IC 128Mbit LVTTL 200 MHz 4.5 ns 54-FBGA (8x8)
Datasheet
Description
SDRAM Memory IC 128Mbit LVTTL 200 MHz 4.5 ns 54-FBGA (8x8)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - NDS76PBA-20ET TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM Memory IC 128Mbit LVTTL 200 MHz 4.5 ns 54-FBGA (8x8)

SDRAM Memory IC 128Mbit LVTTL 200 MHz 4.5 ns 54-FBGA (8x8)

Buy Now Datasheet

Technical Specifications

  Quarktwin Technology Ltd.
Product Category Memory Chips
Product Number NDS76PBA-20ET TR
Product Name Memory
Memory Category DRAM; DRAM Chip
Access Time 4.5 ns
Operating Temperature 0 to 70 C (32 to 158 F)
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 8 611 200 709 - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers
Memory - 71016S12PH - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 12 ns
Density 1000 kbits
View Details
Flash Memory - 1882657 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Number of Words 1024 k
View Details