Insignis Technology Corporation Integrated Circuits (ICs) - Memory - Memory NDS36PT5-20ET

Description
SDR 256MB X16 TSOPII 54L 10X22(X
Description
SDR 256MB X16 TSOPII 54L 10X22(X
Datasheet
Datasheet Summary
Powered by GS/AI

The NDS36PT5-20ET is a 256Mb (x16) Synchronous DRAM (SDRAM) from Quarktwin Technology Ltd., designed for high-speed applications. It features a 16M x 16-bit internal configuration with four banks, allowing for efficient burst-oriented read and write accesses. The device operates at clock rates of 200 MHz and 166 MHz, with access times as fast as 4.5 ns. This SDRAM supports programmable burst lengths of 1, 2, 4, 8, or full page, and includes options for auto refresh and self-refresh modes. It is compliant with AEC-Q100, making it suitable for automotive applications. The memory operates on a single +3.3V ¬±0.3V power supply and is available in a 54-pin TSOP II package, which is both Pb-free and halogen-free. The operating temperature range for this part is from 0¬8C to 70¬8C for Extended Test (ET) applications, and it can also be used in industrial and automotive environments with wider temperature ranges. Engineers looking for a reliable and high-performance memory solution for demanding applications may find the NDS36PT5-20ET to be a suitable choice.

Datasheet Summary
Powered by GS/AI

The NDS36PT5-20ET is a 256Mb (x16) Synchronous DRAM (SDRAM) from Quarktwin Technology Ltd., designed for high-speed applications. It features a 16M x 16-bit internal configuration with four banks, allowing for efficient burst-oriented read and write accesses. The device operates at clock rates of 200 MHz and 166 MHz, with access times as fast as 4.5 ns. This SDRAM supports programmable burst lengths of 1, 2, 4, 8, or full page, and includes options for auto refresh and self-refresh modes. It is compliant with AEC-Q100, making it suitable for automotive applications. The memory operates on a single +3.3V ¬±0.3V power supply and is available in a 54-pin TSOP II package, which is both Pb-free and halogen-free. The operating temperature range for this part is from 0¬8C to 70¬8C for Extended Test (ET) applications, and it can also be used in industrial and automotive environments with wider temperature ranges. Engineers looking for a reliable and high-performance memory solution for demanding applications may find the NDS36PT5-20ET to be a suitable choice.

Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - Memory - NDS36PT5-20ET - Acme Chip Technology Co., Limited
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
NDS36PT5-20ET
Integrated Circuits (ICs) - Memory - Memory NDS36PT5-20ET
SDR 256MB X16 TSOPII 54L 10X22(X

SDR 256MB X16 TSOPII 54L 10X22(X

Supplier's Site
Memory - NDS36PT5-20ET - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM Memory IC 256Mbit LVTTL 200 MHz 54-TSOP II

SDRAM Memory IC 256Mbit LVTTL 200 MHz 54-TSOP II

Buy Now Datasheet

Technical Specifications

  Acme Chip Technology Co., Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number NDS36PT5-20ET NDS36PT5-20ET
Product Name Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Volatile; DRAM Chip DRAM; DRAM Chip
Data Rate 200 MHz
Density 256000 kbits 256000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - MYXxxSMS04GP32xxx-45/x - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category MRAM; STT-MRAM
Access Time 45 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Flash Memory - 1882540 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Bits per Word 8 bits
Pins 8
View Details