Insignis Technology Corporation Memory NDS36PT5-20ET TR

Description
SDRAM Memory IC 256Mbit Parallel 200 MHz 4.5 ns 54-TSOP II
Datasheet
Description
SDRAM Memory IC 256Mbit Parallel 200 MHz 4.5 ns 54-TSOP II
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - NDS36PT5-20ET TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM Memory IC 256Mbit Parallel 200 MHz 4.5 ns 54-TSOP II

SDRAM Memory IC 256Mbit Parallel 200 MHz 4.5 ns 54-TSOP II

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - NDS36PT5-20ET TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
NDS36PT5-20ET TR
Integrated Circuits (ICs) - Memory - Memory NDS36PT5-20ET TR
IC DRAM 256MBIT PAR 54TSOP II

IC DRAM 256MBIT PAR 54TSOP II

Supplier's Site
IC DRAM 256MBIT PAR 54TSOP II

IC DRAM 256MBIT PAR 54TSOP II

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number NDS36PT5-20ET TR NDS36PT5-20ET TR NDS36PT5-20ET TR
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Access Time 4.5 ns 4.5 ns
Operating Temperature 0 to 70 C (32 to 158 F)
Density 256000 kbits 256000 kbits 256000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Rochester Electronics
Specs
Memory Category DRAM; DRAM Chip
Access Time 5.4 ns
Density 64000 kbits
View Details
SDRAM - 2420770 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 20 ns
Number of Words 128000 k
View Details
Memory - SMJ44C256 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 80 to 150 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 580536-002-00 - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers