Insignis Technology Corporation Memory NDS36PT5-20ET TR

Description
IC DRAM 256MBIT PAR 54TSOP II
Datasheet
Description
IC DRAM 256MBIT PAR 54TSOP II
Datasheet

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IC DRAM 256MBIT PAR 54TSOP II

IC DRAM 256MBIT PAR 54TSOP II

Supplier's Site Datasheet
Memory - NDS36PT5-20ET TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM Memory IC 256Mbit Parallel 200 MHz 4.5 ns 54-TSOP II

SDRAM Memory IC 256Mbit Parallel 200 MHz 4.5 ns 54-TSOP II

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - NDS36PT5-20ET TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
NDS36PT5-20ET TR
Integrated Circuits (ICs) - Memory - Memory NDS36PT5-20ET TR
IC DRAM 256MBIT PAR 54TSOP II

IC DRAM 256MBIT PAR 54TSOP II

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number NDS36PT5-20ET TR NDS36PT5-20ET TR NDS36PT5-20ET TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 4.5 ns 4.5 ns
Density 256000 kbits 256000 kbits 256000 kbits
Operating Temperature 0 to 70 C (32 to 158 F)
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