Insignis Technology Corporation Memory NDS36PT5-16ET TR

Description
IC DRAM 256MBIT PAR 54TSOP II
Datasheet
Description
IC DRAM 256MBIT PAR 54TSOP II
Datasheet

Suppliers

Company
Product
Description
Supplier Links
IC DRAM 256MBIT PAR 54TSOP II

IC DRAM 256MBIT PAR 54TSOP II

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - NDS36PT5-16ET TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
NDS36PT5-16ET TR
Integrated Circuits (ICs) - Memory - Memory NDS36PT5-16ET TR
IC DRAM 256MBIT PAR 54TSOP II

IC DRAM 256MBIT PAR 54TSOP II

Supplier's Site
Memory - NDS36PT5-16ET TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM Memory IC 256Mbit Parallel 166 MHz 54-TSOP II

SDRAM Memory IC 256Mbit Parallel 166 MHz 54-TSOP II

Buy Now Datasheet

Technical Specifications

  Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number NDS36PT5-16ET TR NDS36PT5-16ET TR NDS36PT5-16ET TR
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1882861 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Bits per Word 8 bits
View Details
Memory - 24C04/P - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EEPROM; EEPROM
Access Time 3500 ns
Density 4 kbits
View Details
Memory - 593995-002-38 - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers
Memory - SMJ44C256 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 80 to 150 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details