Innoscience Technology Co., Ltd. GaN Power Transistor INN650D080BS

Description
Please Note: These products are available for global purchase with the exception of Germany. We are unable to process or ship orders for these items to addresses within Germany. Currently not available for sale in the U.S. 650V GaN-on-Silicon Enhancement-mode Power Transistor in Dual Flat No-lead package (DFN) with 8 mm x 8 mm size Features Enhancement mode transistor-Normally off power switch Ultra high switching frequency No reverse-recovery charge Low gate charge, low output charge Qualified for industrial applications according to JEDEC Standards ESD safeguard RoHS, Pb-free, REACH-compliant Applications AC-DC converters DC-DC converters BCM/DCM totem pole PFC Fast battery charging High density power conversion High efficiency power conversion
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Description
Please Note: These products are available for global purchase with the exception of Germany. We are unable to process or ship orders for these items to addresses within Germany. Currently not available for sale in the U.S. 650V GaN-on-Silicon Enhancement-mode Power Transistor in Dual Flat No-lead package (DFN) with 8 mm x 8 mm size Features Enhancement mode transistor-Normally off power switch Ultra high switching frequency No reverse-recovery charge Low gate charge, low output charge Qualified for industrial applications according to JEDEC Standards ESD safeguard RoHS, Pb-free, REACH-compliant Applications AC-DC converters DC-DC converters BCM/DCM totem pole PFC Fast battery charging High density power conversion High efficiency power conversion
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
GaN Power Transistor - INN650D080BS - Richardson RFPD
Downers Grove, IL, United States
GaN Power Transistor
INN650D080BS
GaN Power Transistor INN650D080BS
Please Note: These products are available for global purchase with the exception of Germany. We are unable to process or ship orders for these items to addresses within Germany. Currently not available for sale in the U.S. 650V GaN-on-Silicon Enhancement-mode Power Transistor in Dual Flat No-lead package (DFN) with 8 mm x 8 mm size Features Enhancement mode transistor-Normally off power switch Ultra high switching frequency No reverse-recovery charge Low gate charge, low output charge Qualified for industrial applications according to JEDEC Standards ESD safeguard RoHS, Pb-free, REACH-compliant Applications AC-DC converters DC-DC converters BCM/DCM totem pole PFC Fast battery charging High density power conversion High efficiency power conversion

Please Note: These products are available for global purchase with the exception of Germany. We are unable to process or ship orders for these items to addresses within Germany.

Currently not available for sale in the U.S.

650V GaN-on-Silicon Enhancement-mode Power Transistor in Dual Flat No-lead package (DFN) with 8 mm x 8 mm size

Features

  • Enhancement mode transistor-Normally off power switch
  • Ultra high switching frequency
  • No reverse-recovery charge
  • Low gate charge, low output charge
  • Qualified for industrial applications according to JEDEC Standards
  • ESD safeguard
  • RoHS, Pb-free, REACH-compliant

Applications

  • AC-DC converters
  • DC-DC converters
  • BCM/DCM totem pole PFC
  • Fast battery charging
  • High density power conversion
  • High efficiency power conversion
Supplier's Site

Technical Specifications

  Richardson RFPD
Product Category Transistors
Product Number INN650D080BS
Product Name GaN Power Transistor
Transistor Technology / Material GaN
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