Innoscience Technology Co., Ltd. GaN Power Transistor INN650D080BS

Description
Currently not available for sale in the U.S. 650V GaN-on-Silicon Enhancement-mode Power Transistor in Dual Flat No-lead package (DFN) with 8 mm x 8 mm size Features Enhancement mode transistor-Normally off power switch Ultra high switching frequency No reverse-recovery charge Low gate charge, low output charge Qualified for industrial applications according to JEDEC Standards ESD safeguard RoHS, Pb-free, REACH-compliant Applications AC-DC converters DC-DC converters BCM/DCM totem pole PFC Fast battery charging High density power conversion High efficiency power conversion
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Description
Currently not available for sale in the U.S. 650V GaN-on-Silicon Enhancement-mode Power Transistor in Dual Flat No-lead package (DFN) with 8 mm x 8 mm size Features Enhancement mode transistor-Normally off power switch Ultra high switching frequency No reverse-recovery charge Low gate charge, low output charge Qualified for industrial applications according to JEDEC Standards ESD safeguard RoHS, Pb-free, REACH-compliant Applications AC-DC converters DC-DC converters BCM/DCM totem pole PFC Fast battery charging High density power conversion High efficiency power conversion
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
GaN Power Transistor - INN650D080BS - Richardson RFPD
Downers Grove, IL, United States
GaN Power Transistor
INN650D080BS
GaN Power Transistor INN650D080BS
Currently not available for sale in the U.S. 650V GaN-on-Silicon Enhancement-mode Power Transistor in Dual Flat No-lead package (DFN) with 8 mm x 8 mm size Features Enhancement mode transistor-Normally off power switch Ultra high switching frequency No reverse-recovery charge Low gate charge, low output charge Qualified for industrial applications according to JEDEC Standards ESD safeguard RoHS, Pb-free, REACH-compliant Applications AC-DC converters DC-DC converters BCM/DCM totem pole PFC Fast battery charging High density power conversion High efficiency power conversion

Currently not available for sale in the U.S.

650V GaN-on-Silicon Enhancement-mode Power Transistor in Dual Flat No-lead package (DFN) with 8 mm x 8 mm size

Features

  • Enhancement mode transistor-Normally off power switch
  • Ultra high switching frequency
  • No reverse-recovery charge
  • Low gate charge, low output charge
  • Qualified for industrial applications according to JEDEC Standards
  • ESD safeguard
  • RoHS, Pb-free, REACH-compliant

Applications

  • AC-DC converters
  • DC-DC converters
  • BCM/DCM totem pole PFC
  • Fast battery charging
  • High density power conversion
  • High efficiency power conversion
Supplier's Site

Technical Specifications

  Richardson RFPD
Product Category Transistors
Product Number INN650D080BS
Product Name GaN Power Transistor
Transistor Technology / Material GaN
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