Infineon Technologies AG Security & smart card solutions - Contactless memories - my-d™ move - SLE 66R01P SLE 66R01P

Description
Intelligent 152 byte EEPROM with contactless interface compliant to ISO/IEC 14443-3 Type A and support of NFC Forum Type 2 Tag operation. Contactless Interface Physical interface and Anticollision compliant to ISO/IEC 14443-3 Type A Operation frequency 13.56 MHz Data rate 106 kbit/s in both direction Contactless transmission of data and supply energy Anticollision logic: Several cards may be operated in the field simultaneously Unique Identification number (7-byte double-size UID) Read / write distance up to 10 cm and more (influenced by external circuitry i.e. reader and inlay design) Up to 152 bytes EEPROM Organized in 38 blocks of 4 bytes each 128 bytes freely programmable user memory 24 bytes of service area reserved for UID, configuration, LOCK bytes, OTP block and manufacturer data EEPROM programming time per page < 4 ms EEPROM endurance minimum 10,000 erase/write cycles1) NFC Tag Operation Support of NFC Forum™ - Type 2 Tag Operation Specification Support of static and dynamic memory structure according to NFC Forum Type 2 Tag operation. UNINITIALIZED state, may be configured to INITIALIZED state Electrical characteristics On-Chip capacitance 17 pF + 5% ESD protection minimum 2 kV Ambient temperature -25°C ... +70°C (for the chip)
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Description
Intelligent 152 byte EEPROM with contactless interface compliant to ISO/IEC 14443-3 Type A and support of NFC Forum Type 2 Tag operation. Contactless Interface Physical interface and Anticollision compliant to ISO/IEC 14443-3 Type A Operation frequency 13.56 MHz Data rate 106 kbit/s in both direction Contactless transmission of data and supply energy Anticollision logic: Several cards may be operated in the field simultaneously Unique Identification number (7-byte double-size UID) Read / write distance up to 10 cm and more (influenced by external circuitry i.e. reader and inlay design) Up to 152 bytes EEPROM Organized in 38 blocks of 4 bytes each 128 bytes freely programmable user memory 24 bytes of service area reserved for UID, configuration, LOCK bytes, OTP block and manufacturer data EEPROM programming time per page < 4 ms EEPROM endurance minimum 10,000 erase/write cycles1) NFC Tag Operation Support of NFC Forum™ - Type 2 Tag Operation Specification Support of static and dynamic memory structure according to NFC Forum Type 2 Tag operation. UNINITIALIZED state, may be configured to INITIALIZED state Electrical characteristics On-Chip capacitance 17 pF + 5% ESD protection minimum 2 kV Ambient temperature -25°C ... +70°C (for the chip)
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Suppliers

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Security & smart card solutions - Contactless memories - my-d™ move - SLE 66R01P - SLE 66R01P - Infineon Technologies AG
Neubiberg, Germany
Security & smart card solutions - Contactless memories - my-d™ move - SLE 66R01P
SLE 66R01P
Security & smart card solutions - Contactless memories - my-d™ move - SLE 66R01P SLE 66R01P
Intelligent 152 byte EEPROM with contactless interface compliant to ISO/IEC 14443-3 Type A and support of NFC Forum Type 2 Tag operation. Contactless Interface Physical interface and Anticollision compliant to ISO/IEC 14443-3 Type A Operation frequency 13.56 MHz Data rate 106 kbit/s in both direction Contactless transmission of data and supply energy Anticollision logic: Several cards may be operated in the field simultaneously Unique Identification number (7-byte double-size UID) Read / write distance up to 10 cm and more (influenced by external circuitry i.e. reader and inlay design) Up to 152 bytes EEPROM Organized in 38 blocks of 4 bytes each 128 bytes freely programmable user memory 24 bytes of service area reserved for UID, configuration, LOCK bytes, OTP block and manufacturer data EEPROM programming time per page < 4 ms EEPROM endurance minimum 10,000 erase/write cycles1) NFC Tag Operation Support of NFC Forum™ - Type 2 Tag Operation Specification Support of static and dynamic memory structure according to NFC Forum Type 2 Tag operation. UNINITIALIZED state, may be configured to INITIALIZED state Electrical characteristics On-Chip capacitance 17 pF + 5% ESD protection minimum 2 kV Ambient temperature -25°C ... +70°C (for the chip)

Intelligent 152 byte EEPROM with contactless interface compliant to ISO/IEC 14443-3 Type A and support of NFC Forum Type 2 Tag operation.

Contactless Interface

  • Physical interface and Anticollision compliant to ISO/IEC 14443-3 Type A
    • Operation frequency 13.56 MHz
    • Data rate 106 kbit/s in both direction
    • Contactless transmission of data and supply energy
    • Anticollision logic: Several cards may be operated in the field simultaneously
  • Unique Identification number (7-byte double-size UID)
  • Read / write distance up to 10 cm and more (influenced by external circuitry i.e. reader and inlay design)

Up to 152 bytes EEPROM

  • Organized in 38 blocks of 4 bytes each
  • 128 bytes freely programmable user memory
  • 24 bytes of service area reserved for UID, configuration, LOCK bytes, OTP block and manufacturer data
  • EEPROM programming time per page < 4 ms
  • EEPROM endurance minimum 10,000 erase/write cycles1)

NFC Tag Operation

  • Support of NFC Forum™ - Type 2 Tag Operation Specification
  • Support of static and dynamic memory structure according to NFC Forum Type 2 Tag operation.
  • UNINITIALIZED state, may be configured to INITIALIZED state

Electrical characteristics

  • On-Chip capacitance 17 pF + 5%
  • ESD protection minimum 2 kV
  • Ambient temperature -25°C ... +70°C (for the chip)
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Technical Specifications

  Infineon Technologies AG
Product Category Memory Chips
Product Number SLE 66R01P
Product Name Security & smart card solutions - Contactless memories - my-d™ move - SLE 66R01P
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