Emitter Controlled Diode is Infineon's unique Fast Recovery Diode technology. The ultrathin wafer and Fieldstop technology makes the Emitter Controlled Diode ideally suited for consumer and industry applications as it lowers the turn-on losses of the IGBT with soft recovery. The Emitter Controlled Diode is optimized for Infineon IGBT technology.
Summary of Features
Soft, fast switching
Low reverse recovery charge
Small temperature coefficient
Potential Applications
Industrial drives
Resonant applications
Applications
Solid-State Circuit Breaker
Designers who used this product also designed with
1ED3122MU12H | Gate driver ICs
IPD028N06NF2S | N-Channel Power MOSFET
1ED3122MU12H | Gate driver ICs
IPD028N06NF2S | N-Channel Power MOSFET
1ED3122MU12H | Gate driver ICs
IPD028N06NF2S | N-Channel Power MOSFET
Emitter Controlled Diode is Infineon's unique Fast Recovery Diode technology. The ultrathin wafer and Fieldstop technology makes the Emitter Controlled Diode ideally suited for consumer and industry applications as it lowers the turn-on losses of the IGBT with soft recovery. The Emitter Controlled Diode is optimized for Infineon IGBT technology.
Summary of Features
- Soft, fast switching
- Low reverse recovery charge
- Small temperature coefficient
Potential Applications
- Industrial drives
- Resonant applications
Applications
- Solid-State Circuit Breaker
Designers who used this product also designed with
- 1ED3122MU12H |
Gate driver ICs
- IPD028N06NF2S |
N-Channel Power MOSFET
- 1ED3122MU12H |
Gate driver ICs
- IPD028N06NF2S |
N-Channel Power MOSFET
- 1ED3122MU12H |
Gate driver ICs
- IPD028N06NF2S |
N-Channel Power MOSFET
