Infineon Technologies AG Power - Diode & Thyristor (Si/SiC) - Diode Bare Dies - SIDC30D120H8 SIDC30D120H8

Description
Emitter Controlled Diode is Infineon's unique Fast Recovery Diode technology. The ultrathin wafer and Fieldstop technology makes the Emitter Controlled Diode ideally suited for consumer and industry applications as it lowers the turn-on losses of the IGBT with soft recovery. The Emitter Controlled Diode is optimized for Infineon IGBT technology. Summary of Features Soft, fast switching Low reverse recovery charge Small temperature coefficient
  • Power - Diode & Thyristor (Si/SiC) - Diode Bare Dies - SIDC30D120H8 - SIDC30D120H8 - Infineon Technologies AG
    Infineon Technologies AG
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Description
Emitter Controlled Diode is Infineon's unique Fast Recovery Diode technology. The ultrathin wafer and Fieldstop technology makes the Emitter Controlled Diode ideally suited for consumer and industry applications as it lowers the turn-on losses of the IGBT with soft recovery. The Emitter Controlled Diode is optimized for Infineon IGBT technology. Summary of Features Soft, fast switching Low reverse recovery charge Small temperature coefficient
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Power - Diode & Thyristor (Si/SiC) - Diode Bare Dies - SIDC30D120H8 - SIDC30D120H8 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
Power - Diode & Thyristor (Si/SiC) - Diode Bare Dies - SIDC30D120H8
SIDC30D120H8
Power - Diode & Thyristor (Si/SiC) - Diode Bare Dies - SIDC30D120H8 SIDC30D120H8
Emitter Controlled Diode is Infineon's unique Fast Recovery Diode technology. The ultrathin wafer and Fieldstop technology makes the Emitter Controlled Diode ideally suited for consumer and industry applications as it lowers the turn-on losses of the IGBT with soft recovery. The Emitter Controlled Diode is optimized for Infineon IGBT technology. Summary of Features Soft, fast switching Low reverse recovery charge Small temperature coefficient

Emitter Controlled Diode is Infineon's unique Fast Recovery Diode technology. The ultrathin wafer and Fieldstop technology makes the Emitter Controlled Diode ideally suited for consumer and industry applications as it lowers the turn-on losses of the IGBT with soft recovery. The Emitter Controlled Diode is optimized for Infineon IGBT technology.


Summary of Features

  • Soft, fast switching
  • Low reverse recovery charge
  • Small temperature coefficient
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power Diodes
Product Number SIDC30D120H8
Product Name Power - Diode & Thyristor (Si/SiC) - Diode Bare Dies - SIDC30D120H8
RoHS Compliant RoHS
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