Infineon Technologies AG Diode Bare Dies SIDC26D65C8

Description
Emitter Controlled Diode is Infineon's unique Fast Recovery Diode technology. The ultrathin wafer and Fieldstop technology makes the Emitter Controlled Diode ideally suited for consumer and industry applications as it lowers the turn-on losses of the IGBT with soft recovery. The Emitter Controlled Diode is optimized for Infineon IGBT technology. Summary of Features Soft, fast switching Low reverse recovery charge Small temperature coefficient Potential Applications Industrial drives Resonant applications
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Description
Emitter Controlled Diode is Infineon's unique Fast Recovery Diode technology. The ultrathin wafer and Fieldstop technology makes the Emitter Controlled Diode ideally suited for consumer and industry applications as it lowers the turn-on losses of the IGBT with soft recovery. The Emitter Controlled Diode is optimized for Infineon IGBT technology. Summary of Features Soft, fast switching Low reverse recovery charge Small temperature coefficient Potential Applications Industrial drives Resonant applications
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Diode Bare Dies - SIDC26D65C8 - Infineon Technologies AG
Neubiberg, Germany
Diode Bare Dies
SIDC26D65C8
Diode Bare Dies SIDC26D65C8
Emitter Controlled Diode is Infineon's unique Fast Recovery Diode technology. The ultrathin wafer and Fieldstop technology makes the Emitter Controlled Diode ideally suited for consumer and industry applications as it lowers the turn-on losses of the IGBT with soft recovery. The Emitter Controlled Diode is optimized for Infineon IGBT technology. Summary of Features Soft, fast switching Low reverse recovery charge Small temperature coefficient Potential Applications Industrial drives Resonant applications

Emitter Controlled Diode is Infineon's unique Fast Recovery Diode technology. The ultrathin wafer and Fieldstop technology makes the Emitter Controlled Diode ideally suited for consumer and industry applications as it lowers the turn-on losses of the IGBT with soft recovery. The Emitter Controlled Diode is optimized for Infineon IGBT technology.


Summary of Features

  • Soft, fast switching
  • Low reverse recovery charge
  • Small temperature coefficient

Potential Applications

  • Industrial drives
  • Resonant applications
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power Diodes
Product Number SIDC26D65C8
Product Name Diode Bare Dies
RoHS Compliant RoHS
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