Infineon Technologies AG PSRAM (Pseudostatic DRAM) S80KS5122GABHM020

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PSRAM (Pseudostatic DRAM) - S80KS5122GABHM020 - Infineon Technologies AG
Neubiberg, Germany
PSRAM (Pseudostatic DRAM) S80KS5122GABHM020
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Memory - 448-S80KS5122GABHM020-ND - Digi-Key Electronics
Thief River Falls, MN, USA
HYPERRAM

HYPERRAM

Supplier's Site Datasheet
Dram, Aec-Q100, 512Mbit, -40 To 125Deg C Rohs Compliant Cypress - Infineon Technologies - 29AK8416 - Newark, An Avnet Company
Chicago, IL, United States
Dram, Aec-Q100, 512Mbit, -40 To 125Deg C Rohs Compliant Cypress - Infineon Technologies 29AK8416
DRAM, AEC-Q100, 512MBIT, -40 TO 125DEG C ROHS COMPLIANT: YES

DRAM, AEC-Q100, 512MBIT, -40 TO 125DEG C ROHS COMPLIANT: YES

Supplier's Site

Technical Specifications

  Infineon Technologies AG Digi-Key Electronics Newark, An Avnet Company
Product Category Memory Chips Memory Chips Memory Chips
Product Number S80KS5122GABHM020 448-S80KS5122GABHM020-ND 29AK8416
Product Name PSRAM (Pseudostatic DRAM) Memory Dram, Aec-Q100, 512Mbit, -40 To 125Deg C Rohs Compliant Cypress - Infineon Technologies
Package Type PG-BGA-24 24-VBGA
Operating Temperature -40 to 125 C (-40 to 257 F) -40 to 125 C (-40 to 257 F)
Access Time 35 ns
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