Infineon Technologies AG Memory S70FS01GSAGBHB210

Description
S70FL01GS - 1 Gbit (128 Mbyte) 3.0 V SPI Flash Memory
Request a Quote
Description
S70FL01GS - 1 Gbit (128 Mbyte) 3.0 V SPI Flash Memory
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

The S70FS01GSAGBHB210 is a 1Gb (128 MB) FS-S Flash memory device from Lingto Electronic Limited, featuring SPI Multi-I/O interface and operating at a voltage range of 1.7 V to 2.0 V. It supports various SPI clock polarity and phase modes, including DDR, and offers extended addressing options of 24 or 32 bits. The device is compatible with the S25FL1-K, S25FL-P, and S25FL-S SPI families, making it versatile for integration into existing systems. Read commands include Normal, Fast, Dual I/O, Quad I/O, and DDR Quad I/O, with maximum read rates reaching up to 80 MBps in DDR Quad I/O mode. The programming capabilities include a 256 or 512 bytes page programming buffer, with typical programming rates of 711 KBps and 1078 KBps, respectively. The device also features a minimum of 100,000 program-erase cycles and a data retention period of at least 20 years. For erasing, the S70FS01GSAGBHB210 offers both hybrid and uniform sector options, with erase suspend and resume capabilities. Security features include an OTP array and block protection options, allowing for controlled access to specific sectors. The device is available in multiple package options, including a 16-lead SOIC and a BGA-24 footprint, and is suitable for a wide temperature range, including industrial and automotive grades.

Datasheet Summary
Powered by GS/AI

The S70FS01GSAGBHB210 is a 1Gb (128 MB) FS-S Flash memory device from Lingto Electronic Limited, featuring SPI Multi-I/O interface and operating at a voltage range of 1.7 V to 2.0 V. It supports various SPI clock polarity and phase modes, including DDR, and offers extended addressing options of 24 or 32 bits. The device is compatible with the S25FL1-K, S25FL-P, and S25FL-S SPI families, making it versatile for integration into existing systems. Read commands include Normal, Fast, Dual I/O, Quad I/O, and DDR Quad I/O, with maximum read rates reaching up to 80 MBps in DDR Quad I/O mode. The programming capabilities include a 256 or 512 bytes page programming buffer, with typical programming rates of 711 KBps and 1078 KBps, respectively. The device also features a minimum of 100,000 program-erase cycles and a data retention period of at least 20 years. For erasing, the S70FS01GSAGBHB210 offers both hybrid and uniform sector options, with erase suspend and resume capabilities. Security features include an OTP array and block protection options, allowing for controlled access to specific sectors. The device is available in multiple package options, including a 16-lead SOIC and a BGA-24 footprint, and is suitable for a wide temperature range, including industrial and automotive grades.

Suppliers

Company
Product
Description
Supplier Links
 - S70FS01GSAGBHB210 - Rochester Electronics
Newburyport, MA, United States
S70FL01GS - 1 Gbit (128 Mbyte) 3.0 V SPI Flash Memory

S70FL01GS - 1 Gbit (128 Mbyte) 3.0 V SPI Flash Memory

Supplier's Site Datasheet
Memory - 448-S70FS01GSAGBHB210-ND - DigiKey
Thief River Falls, MN, United States
FLASH - NOR Memory IC 1Gb (128M x 8) SPI - Quad I/O 133MHz 24-BGA (8x6)

FLASH - NOR Memory IC 1Gb (128M x 8) SPI - Quad I/O 133MHz 24-BGA (8x6)

Buy Now Datasheet
IC FLASH 1GBIT SPI/QUAD 24BGA

IC FLASH 1GBIT SPI/QUAD 24BGA

Supplier's Site Datasheet
Memory - S70FS01GSAGBHB210 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 1Gbit SPI - Quad I/O 133 MHz 24-BGA (8x6)

FLASH - NOR Memory IC 1Gbit SPI - Quad I/O 133 MHz 24-BGA (8x6)

Buy Now Datasheet

Technical Specifications

  Rochester Electronics DigiKey Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number S70FS01GSAGBHB210 448-S70FS01GSAGBHB210-ND S70FS01GSAGBHB210 S70FS01GSAGBHB210
Product Name Memory Memory Memory
Memory Category Flash Flash Flash; Flash Flash; FLASH
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1882785 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Bits per Word 8 bits
View Details
 - 4164-15JDS/BEA - Rochester Electronics
Rochester Electronics
Specs
Memory Category DRAM Chip
Package Type DIP; CDIP16
View Details
3 suppliers
Memory - 54F189DLQB - Quarktwin Technology Ltd.
Texas Instruments
Specs
Memory Category RAM
Access Time 32 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
2 suppliers
Memory - AS28C010 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category EEPROM; EEPROM
Access Time 120 to 250 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details