Infineon Technologies AG Memories - Radiation hardened and high-reliability memories - Defense Memories - S70FL01GSAGBAEC10 S70FL01GSAGBAEC10

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Description
Home // Products // Memories // Radiation hardened and high-reliability memories // Defense Memories // S70FL01GSAGBAEC10
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Memories - Radiation hardened and high-reliability memories - Defense Memories - S70FL01GSAGBAEC10 - S70FL01GSAGBAEC10 - Infineon Technologies AG
Neubiberg, Germany
Memories - Radiation hardened and high-reliability memories - Defense Memories - S70FL01GSAGBAEC10
S70FL01GSAGBAEC10
Memories - Radiation hardened and high-reliability memories - Defense Memories - S70FL01GSAGBAEC10 S70FL01GSAGBAEC10
Home // Products // Memories // Radiation hardened and high-reliability memories // Defense Memories // S70FL01GSAGBAEC10

Home // Products // Memories // Radiation hardened and high-reliability memories // Defense Memories // S70FL01GSAGBAEC10

Supplier's Site Datasheet
Memory - S70FL01GSAGBAEC10 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR (SLC) Memory IC 1Gbit SPI - Quad I/O 133 MHz 6.5 ns 24-BGA (8x6)

FLASH - NOR (SLC) Memory IC 1Gbit SPI - Quad I/O 133 MHz 6.5 ns 24-BGA (8x6)

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Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
S70FL01GSAGBAEC10
Integrated Circuits (ICs) - Memory - Memory S70FL01GSAGBAEC10
STD SPI

STD SPI

Supplier's Site

Technical Specifications

  Infineon Technologies AG Quarktwin Technology Ltd. Acme Chip Technology Co., Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number S70FL01GSAGBAEC10 S70FL01GSAGBAEC10 S70FL01GSAGBAEC10
Product Name Memories - Radiation hardened and high-reliability memories - Defense Memories - S70FL01GSAGBAEC10 Memory Integrated Circuits (ICs) - Memory - Memory
Operating Temperature -55 to 125 C (-67 to 257 F) -55 to 125 C (-67 to 257 F)
Density 1000000 kbits 1000000 kbits 128000 kbits
Package Type P-TFBGA-24 BGA; 24-TBGA
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