Infineon Technologies AG Memories - Radiation hardened and high-reliability memories - Defense Memories - S70FL01GSAGBAEC10 S70FL01GSAGBAEC10

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Home // Products // Memories // Radiation hardened and high-reliability memories // Defense Memories // S70FL01GSAGBAEC10
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Description
Home // Products // Memories // Radiation hardened and high-reliability memories // Defense Memories // S70FL01GSAGBAEC10
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Memories - Radiation hardened and high-reliability memories - Defense Memories - S70FL01GSAGBAEC10 - S70FL01GSAGBAEC10 - Infineon Technologies AG
Neubiberg, Germany
Memories - Radiation hardened and high-reliability memories - Defense Memories - S70FL01GSAGBAEC10
S70FL01GSAGBAEC10
Memories - Radiation hardened and high-reliability memories - Defense Memories - S70FL01GSAGBAEC10 S70FL01GSAGBAEC10
Home // Products // Memories // Radiation hardened and high-reliability memories // Defense Memories // S70FL01GSAGBAEC10

Home // Products // Memories // Radiation hardened and high-reliability memories // Defense Memories // S70FL01GSAGBAEC10

Supplier's Site Datasheet
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
S70FL01GSAGBAEC10
Integrated Circuits (ICs) - Memory - Memory S70FL01GSAGBAEC10
STD SPI

STD SPI

Supplier's Site
Memory - S70FL01GSAGBAEC10 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR (SLC) Memory IC 1Gbit SPI - Quad I/O 133 MHz 6.5 ns 24-BGA (8x6)

FLASH - NOR (SLC) Memory IC 1Gbit SPI - Quad I/O 133 MHz 6.5 ns 24-BGA (8x6)

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Technical Specifications

  Infineon Technologies AG Acme Chip Technology Co., Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number S70FL01GSAGBAEC10 S70FL01GSAGBAEC10 S70FL01GSAGBAEC10
Product Name Memories - Radiation hardened and high-reliability memories - Defense Memories - S70FL01GSAGBAEC10 Integrated Circuits (ICs) - Memory - Memory Memory
Operating Temperature -55 to 125 C (-67 to 257 F) -55 to 125 C (-67 to 257 F)
Density 1000000 kbits 128000 kbits 1000000 kbits
Package Type P-TFBGA-24 BGA; 24-TBGA
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