Infineon Technologies AG Memory S30MS01GR25TFW100

Description
FLASH - NAND Memory IC 1Gbit Parallel 25 ns 48-TSOP
  • Memory - S30MS01GR25TFW100 - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
Datasheet
Description
FLASH - NAND Memory IC 1Gbit Parallel 25 ns 48-TSOP
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - S30MS01GR25TFW100 - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
S30MS01GR25TFW100
Memory S30MS01GR25TFW100
FLASH - NAND Memory IC 1Gbit Parallel 25 ns 48-TSOP

FLASH - NAND Memory IC 1Gbit Parallel 25 ns 48-TSOP

Buy Now
Lingto Electronic Limited
Shenzhen, China
Memory
S30MS01GR25TFW100
Memory S30MS01GR25TFW100
IC FLASH 1GBIT PARALLEL 48TSOP

IC FLASH 1GBIT PARALLEL 48TSOP

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips
Product Number S30MS01GR25TFW100 S30MS01GR25TFW100
Product Name Memory Memory
Memory Category Flash; FLASH Flash; Flash
Access Time 25 ns 25 ns
Operating Temperature -25 to 85 C (-13 to 185 F)
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1882861 - RS Components, Ltd.
RS Components, Ltd.
Flash Memory
1882861
Specs
Memory Category Flash
Access Time 25000 ns
Bits per Word 8 bits
View Details
Memory - 7164L20YGI - Lingto Electronic Limited
Rochester Electronics
Memory
7164L20YGI
Specs
Memory Category SRAM; SRAM Chip
Access Time 20 ns
Density 64 kbits
View Details
BGA Memory IC and Storage Component - 736-PCI7402ZHK - ERSAELECTRONICS PTE. LTD.
Texas Instruments
BGA Memory IC and Storage Component
PCI7402ZHK
Specs
Memory Category Flash
Operating Temperature 0 C (32 F)
Package Type BGA; BGA
View Details
2 suppliers
Memory - AS5C4009 - Micross Components, Inc.
Micross Components, Inc.
Memory
AS5C4009
Specs
Memory Category SRAM; SRAM Chip
Access Time 55 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details