Infineon Technologies AG Memory IC and Storage Component S29WS128N0PBFW013

The S29WS128N0PBFW013 is a 128 Mbit (16 M x 16 bit) Flash memory device from Quarktwin Technology Ltd., utilizing 110 nm MirrorBit,Ñ¢ technology. It operates at a voltage range of 1.7 V to 1.95 V and supports simultaneous read and write operations with zero latency across its architecture, which consists of eight banks. The device features a 32-word write buffer and supports various burst read modes, making it suitable for high-performance applications. This memory chip has a typical cycling endurance of 100,000 program/erase cycles per sector and offers a data retention period of up to 20 years. It includes advanced sector protection methods and a secured silicon sector for factory and customer use. The device is packaged in an 84-ball FBGA format, measuring 8 mm x 11.6 mm, and is designed for low power consumption, with typical current consumption values of 38 mA during continuous burst read and 19 mA during program and erase operations. However, it is important to note that this product family has been retired and is not recommended for new designs, with suggested migration paths to the S29WS128P and S29WS256P models.