Infineon Technologies AG Memory S29GL512T11DHB023

Description
FLASH - NOR Memory IC 512Mb (64M x 8) Parallel 110ns 64-FBGA (9x9)
Request a Quote Datasheet
Description
FLASH - NOR Memory IC 512Mb (64M x 8) Parallel 110ns 64-FBGA (9x9)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 448-S29GL512T11DHB023TR-ND - DigiKey
Thief River Falls, MN, United States
FLASH - NOR Memory IC 512Mb (64M x 8) Parallel 110ns 64-FBGA (9x9)

FLASH - NOR Memory IC 512Mb (64M x 8) Parallel 110ns 64-FBGA (9x9)

Buy Now Datasheet
IC FLASH 512MBIT PARALLEL 64FBGA

IC FLASH 512MBIT PARALLEL 64FBGA

Supplier's Site Datasheet
Memory - S29GL512T11DHB023 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 512Mbit Parallel 110 ns 64-FBGA (9x9)

FLASH - NOR Memory IC 512Mbit Parallel 110 ns 64-FBGA (9x9)

Buy Now Datasheet

Technical Specifications

  DigiKey Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number 448-S29GL512T11DHB023TR-ND S29GL512T11DHB023 S29GL512T11DHB023
Product Name Memory Memory Memory
Memory Category Flash Flash; Flash Flash; FLASH
Operating Temperature -40 to 105 C (-40 to 221 F) -40 to 105 C (-40 to 221 F)
Density 512000 kbits 512000 kbits 512000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 323017-032W 02 - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers
Memory - 0418A4ACLAA-4F - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 4.3 ns
Density 4000 kbits
View Details
Memory - MYXxxSMS04GP32PB1-45/x - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category MRAM; STT-MRAM
Access Time 45 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details