Infineon Technologies AG Memory S29GL512S12TFBV10

Description
FLASH - NOR Memory IC 512Mb (32M x 16) Parallel 120ns 56-TSOP
  • Memory - 448-S29GL512S12TFBV10-ND - DigiKey
    DigiKey
  • Memory - S29GL512S12TFBV10 - Lingto Electronic Limited
    Lingto Electronic Limited
  • Memory - S29GL512S12TFBV10 - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
Request a Quote Datasheet
Description
FLASH - NOR Memory IC 512Mb (32M x 16) Parallel 120ns 56-TSOP
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 448-S29GL512S12TFBV10-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Memory
448-S29GL512S12TFBV10-ND
Memory 448-S29GL512S12TFBV10-ND
FLASH - NOR Memory IC 512Mb (32M x 16) Parallel 120ns 56-TSOP

FLASH - NOR Memory IC 512Mb (32M x 16) Parallel 120ns 56-TSOP

Buy Now Datasheet
Memory - S29GL512S12TFBV10 - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
S29GL512S12TFBV10
Memory S29GL512S12TFBV10
IC FLASH 512MBIT PARALLEL 56TSOP

IC FLASH 512MBIT PARALLEL 56TSOP

Supplier's Site Datasheet
Memory - S29GL512S12TFBV10 - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
S29GL512S12TFBV10
Memory S29GL512S12TFBV10
FLASH - NOR Memory IC 512Mbit Parallel 120 ns 56-TSOP

FLASH - NOR Memory IC 512Mbit Parallel 120 ns 56-TSOP

Buy Now Datasheet

Technical Specifications

  DigiKey Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number 448-S29GL512S12TFBV10-ND S29GL512S12TFBV10 S29GL512S12TFBV10
Product Name Memory Memory Memory
Memory Category Flash Flash; Flash Flash; FLASH
Operating Temperature -40 to 105 C (-40 to 221 F) -40 to 105 C (-40 to 221 F)
Density 512000 kbits 512000 kbits 512000 kbits
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