Infineon Technologies AG Memory S29GL512S12TFBV10

Description
FLASH - NOR Memory IC 512Mb (32M x 16) Parallel 120ns 56-TSOP
  • Memory - 448-S29GL512S12TFBV10-ND - DigiKey
    DigiKey
  • Memory - S29GL512S12TFBV10 - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
  • Memory - S29GL512S12TFBV10 - Lingto Electronic Limited
    Lingto Electronic Limited
Request a Quote Datasheet
Description
FLASH - NOR Memory IC 512Mb (32M x 16) Parallel 120ns 56-TSOP
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 448-S29GL512S12TFBV10-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Memory
448-S29GL512S12TFBV10-ND
Memory 448-S29GL512S12TFBV10-ND
FLASH - NOR Memory IC 512Mb (32M x 16) Parallel 120ns 56-TSOP

FLASH - NOR Memory IC 512Mb (32M x 16) Parallel 120ns 56-TSOP

Buy Now Datasheet
Memory - S29GL512S12TFBV10 - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
S29GL512S12TFBV10
Memory S29GL512S12TFBV10
FLASH - NOR Memory IC 512Mbit Parallel 120 ns 56-TSOP

FLASH - NOR Memory IC 512Mbit Parallel 120 ns 56-TSOP

Buy Now Datasheet
Memory - S29GL512S12TFBV10 - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
S29GL512S12TFBV10
Memory S29GL512S12TFBV10
IC FLASH 512MBIT PARALLEL 56TSOP

IC FLASH 512MBIT PARALLEL 56TSOP

Supplier's Site Datasheet

Technical Specifications

  DigiKey Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number 448-S29GL512S12TFBV10-ND S29GL512S12TFBV10 S29GL512S12TFBV10
Product Name Memory Memory Memory
Memory Category Flash Flash; FLASH Flash; Flash
Operating Temperature -40 to 105 C (-40 to 221 F) -40 to 105 C (-40 to 221 F)
Density 512000 kbits 512000 kbits 512000 kbits
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