Infineon Technologies AG Memory S29GL512S12TFBV10

Description
FLASH - NOR Memory IC 512Mb (32M x 16) Parallel 120ns 56-TSOP
Request a Quote Datasheet
Description
FLASH - NOR Memory IC 512Mb (32M x 16) Parallel 120ns 56-TSOP
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 448-S29GL512S12TFBV10-ND - DigiKey
Thief River Falls, MN, United States
FLASH - NOR Memory IC 512Mb (32M x 16) Parallel 120ns 56-TSOP

FLASH - NOR Memory IC 512Mb (32M x 16) Parallel 120ns 56-TSOP

Buy Now Datasheet
Memory - S29GL512S12TFBV10 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 512Mbit Parallel 120 ns 56-TSOP

FLASH - NOR Memory IC 512Mbit Parallel 120 ns 56-TSOP

Buy Now Datasheet
IC FLASH 512MBIT PARALLEL 56TSOP

IC FLASH 512MBIT PARALLEL 56TSOP

Supplier's Site Datasheet

Technical Specifications

  DigiKey Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number 448-S29GL512S12TFBV10-ND S29GL512S12TFBV10 S29GL512S12TFBV10
Product Name Memory Memory Memory
Memory Category Flash Flash; FLASH Flash; Flash
Operating Temperature -40 to 105 C (-40 to 221 F) -40 to 105 C (-40 to 221 F)
Density 512000 kbits 512000 kbits 512000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AS5C1005 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SRAM; SRAM Chip
Access Time 15 to 45 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Flash Memory - 1882540 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Bits per Word 8 bits
Pins 8
View Details
Memory - Memory - Controllers - BQ2205LYPWR - 1154093-BQ2205LYPWR - Win Source Electronics
Specs
Operating Temperature -20 to 70 C (-4 to 158 F)
Package Type SSOP
Supply Voltage 3 V ~ 3.6 V
View Details
4 suppliers
Memory - 27S185ADM/B - Lingto Electronic Limited
Rochester Electronics
View Details
2 suppliers