The S29GL512S10TFI010 is a 512 Mb NOR Flash memory device from Quarktwin Technology Ltd., utilizing 65-nm MIRRORBIT,Ñ¢ Eclipse technology. It operates with a single supply voltage ranging from 2.7 V to 3.6 V and features a versatile I/O voltage range from 1.65 V to V_CC. The device supports a vó16 data bus and provides fast access times, with a page access time as low as 15 ns and a random access time of 90 ns. This memory device includes a 512-byte programming buffer, allowing for efficient programming of up to 256 words in a single operation. It supports automatic error checking and correction (ECC) with single-bit error correction, sector erase capabilities with uniform 128-kbyte sectors, and advanced sector protection methods. The S29GL512S10TFI010 is rated for 100,000 program/erase cycles and offers a data retention period of 20 years. The device is available in multiple packaging options, including a 56-pin TSOP and various BGA configurations. It is suitable for industrial applications with operating temperature ranges from -40°C to +85°C, as well as automotive applications meeting AEC-Q100 standards. The maximum current consumption during active read is 60 mA, with programming and erase operations consuming up to 100 mA.
FLASH - NOR Memory IC 512Mb (32M x 16) Parallel 100ns 56-TSOP
Infineon PNOR S29GL512S10TFI010
Infineon PNOR S29GL512S10TFI010
IC FLASH 512MBIT PARALLEL 56TSOP Product overview: S29GL512S10TFI010 from Infineon Technologies is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-S29GL512S10TFI01
FLASH MEMORY, 512MBIT, 100NS, TSOP-56; Flash Memory Type:Parallel NOR; Memory Size:512Mbit; Flash Memory Configuration:32M x 16bit; IC Interface Type:Parallel; Memory Case Style:TSOP; No. of Pins:56Pins; Clock Frequency:-; Access RoHS Compliant: Yes
FLASH - NOR Memory IC 512Mbit Parallel 100 ns 56-TSOP
IC FLASH 512MBIT PARALLEL 56TSOP
| DigiKey | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | Quarktwin Technology Ltd. | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 448-S29GL512S10TFI010-ND | 2737541 | 774-S29GL512S10TFI010 | 17AC0738 | S29GL512S10TFI010 | S29GL512S10TFI010 |
| Product Name | Memory | Flash Memory | Memory IC and Storage Component | Flash Memory, 512Mbit, 100Ns, Tsop-56; Flash Memory Type Cypress Infineon Technologies | Memory | Memory |
| Memory Category | Flash | Flash | Flash | Flash | Flash; FLASH | Flash; FLASH - NOR |
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 C (-40 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | ||
| Density | 512000 kbits | 4096000 kbits | 512000 kbits | 512000 kbits | 512000 kbits | 512000 kbits |
| Package Type | "56-TFSOP (0.724"", 18.40mm Width)" | TSOP | TSOP | 56-TFSOP (0.724\", 18.40mm Width) | 56-TFSOP (0.724", 18.40mm Width) | |
| Supply Voltage | 2.7V ~ 3.6V | -3.3V; 2.7 | 3.6V; 2.7V ~ 3.6V | 2.7V ~ 3.6V |
