Infineon Technologies AG Memory S29GL256S10WEI019

Description
FLASH - NOR Memory IC 256Mb (16M x 16) Parallel 100ns Wafer
  • Memory - S29GL256S10WEI019-ND - DigiKey
    DigiKey
  • Memory - S29GL256S10WEI019 - Lingto Electronic Limited
    Lingto Electronic Limited
  • Memory - S29GL256S10WEI019 - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
Request a Quote Datasheet
Description
FLASH - NOR Memory IC 256Mb (16M x 16) Parallel 100ns Wafer
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - S29GL256S10WEI019-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Memory
S29GL256S10WEI019-ND
Memory S29GL256S10WEI019-ND
FLASH - NOR Memory IC 256Mb (16M x 16) Parallel 100ns Wafer

FLASH - NOR Memory IC 256Mb (16M x 16) Parallel 100ns Wafer

Buy Now Datasheet
Memory - S29GL256S10WEI019 - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
S29GL256S10WEI019
Memory S29GL256S10WEI019
IC FLASH 256MBIT PARALLEL WAFER

IC FLASH 256MBIT PARALLEL WAFER

Supplier's Site Datasheet
Memory - S29GL256S10WEI019 - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
S29GL256S10WEI019
Memory S29GL256S10WEI019
FLASH - NOR Memory IC 256Mbit Parallel 100 ns Wafer

FLASH - NOR Memory IC 256Mbit Parallel 100 ns Wafer

Buy Now

Technical Specifications

  DigiKey Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number S29GL256S10WEI019-ND S29GL256S10WEI019 S29GL256S10WEI019
Product Name Memory Memory Memory
Memory Category Flash Flash; Flash Flash; FLASH
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 256000 kbits 256000 kbits 256000 kbits
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