Infineon Technologies AG Memory S29GL256P11WEI019

Description
FLASH - NOR Memory IC 256Mbit Parallel 110 ns Wafer
  • Memory - S29GL256P11WEI019 - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
  • Memory - S29GL256P11WEI019 - Lingto Electronic Limited
    Lingto Electronic Limited
Datasheet
Description
FLASH - NOR Memory IC 256Mbit Parallel 110 ns Wafer
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - S29GL256P11WEI019 - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
S29GL256P11WEI019
Memory S29GL256P11WEI019
FLASH - NOR Memory IC 256Mbit Parallel 110 ns Wafer

FLASH - NOR Memory IC 256Mbit Parallel 110 ns Wafer

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Memory - S29GL256P11WEI019 - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
S29GL256P11WEI019
Memory S29GL256P11WEI019
IC FLASH 256MBIT PARALLEL WAFER

IC FLASH 256MBIT PARALLEL WAFER

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips
Product Number S29GL256P11WEI019 S29GL256P11WEI019
Product Name Memory Memory
Memory Category Flash; FLASH Flash; Flash
Access Time 110 ns 110 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
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