Infineon Technologies AG Memory S29GL256P11TFIV13

The S29GL256P11TFIV13 is a 256 Mbit NOR Flash memory device from Quarktwin Technology Ltd., utilizing 90 nm MirrorBit process technology. It operates with a single 3V supply (2.7-3.6 V) and features a fast page access time of 25 ns, with random access times as low as 90 ns. The device includes a write buffer capable of programming up to 32 words (64 bytes) in a single operation, enhancing programming efficiency for embedded applications. This memory device supports a uniform sector architecture with 256 sectors, each 64 Kwords (128 Kbytes) in size, and offers a typical endurance of 100,000 erase cycles per sector. It also features a secured silicon sector for permanent identification and advanced sector protection methods. The S29GL256P is available in a 56-pin TSOP package, making it suitable for various embedded system applications that require high density and low power consumption. Current consumption is low, with typical values of 30 mA during random access read and 1 µA in standby mode.