IC FLASH 256MBIT PARALLEL 64FBGA Product overview: S29GL256P11FFI010 from Infineon Technologies is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-S29GL256P11FFI01
FLASH - NOR Memory IC 256Mb (32M x 8) Parallel 110ns 64-FBGA (13x11)
IC FLASH 256MBIT PARALLEL 64FBGA
FLASH - NOR Memory IC 256Mbit Parallel 110 ns 64-FBGA (13x11)
FLASH MEMORY, 256MBIT, 110NS, 64-BGA; Flash Memory Type:Parallel NOR; Memory Size:256Mbit; Flash Memory Configuration:32M x 8bit / 16M x 16bit; IC Interface Type:Parallel; Memory Case Style:FBGA; No. of Pins:64Pins; Clock Frequency:-RoHS Compliant: Yes
IC FLASH 256MBIT PARALLEL 64FBGA
| ERSAELECTRONICS PTE. LTD. | DigiKey | Lingto Electronic Limited | Quarktwin Technology Ltd. | Newark, An Avnet Company | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-S29GL256P11FFI010 | S29GL256P11FFI010-ND | S29GL256P11FFI010 | S29GL256P11FFI010 | 34M8728 | S29GL256P11FFI010 |
| Product Name | Memory IC and Storage Component | Memory | Memory | Memory | Flash Memory, 256Mbit, 110Ns, 64-Bga; Flash Memory Type Cypress Infineon Technologies | Memory |
| Memory Category | Flash; Non-Volatile | Flash | Flash; Flash | Flash; FLASH | Flash | Flash; FLASH - NOR |
| Access Time | 110 ns | 110 ns | 110 ns | 110 ns | ||
| Cycle Time | 110 ns | |||||
| Endurance | 100000 Write/Erase Cycles | |||||
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) |
