Infineon Technologies AG Memory S29GL128S10TFV013

The S29GL128S10TFV013 is a 128 Mb NOR Flash memory device from Quarktwin Technology Ltd., utilizing MIRRORBIT,Ñ¢ Eclipse technology and fabricated on a 65-nm process. It operates with a single supply voltage ranging from 2.7 V to 3.6 V and features a versatile I/O voltage range from 1.65 V to V_CC. The device supports a vó16 data bus and offers fast access times, with a maximum random access time of 90 ns and a page access time as low as 15 ns. This memory device includes a 512-byte programming buffer, allowing for efficient programming of up to 512 bytes in a single operation. It supports automatic error checking and correction (ECC) with single-bit error correction, sector erase capabilities with uniform 128-kbyte sectors, and advanced sector protection methods. The S29GL128S10TFV013 is rated for 100,000 program/erase cycles and has a data retention period of 20 years. The device is available in various packaging options, including a 56-pin TSOP and multiple BGA configurations. It is suitable for industrial applications with operating temperature ranges from -40¬8C to +85¬8C and automotive applications with AEC-Q100 grade options. This product is designed for embedded applications requiring high density, performance, and low power consumption.