Infineon Technologies AG Memory S29GL064S90TFA043

The S29GL064S90TFA043 is a 64 Mb (8 MB) GL-S MIRRORBIT,Ñ¢ flash memory device from Lingto Electronic Limited, designed for parallel operation at a voltage of 3.0 V. It features a CMOS core and is manufactured using 65-nm MIRRORBIT,Ñ¢ technology, ensuring high reliability and performance. The device supports a flexible sector architecture with 128 sectors of 32 Kwords each, allowing for efficient data management and secure identification through a unique electronic serial number. This flash memory offers a minimum of 100,000 erase cycles per sector and a typical data retention of 20 years. It has a fast access time of 70 ns and supports various package options, including 48-lead TSOP and multiple BGA configurations. The device is compatible with JEDEC standards and includes advanced features such as automatic error checking and correction, sector protection, and suspend/resume capabilities for programming and erasing operations. Power consumption is optimized, with typical currents of 25 mA during initial read and 40 ¬µA in standby mode. The device operates within a temperature range suitable for industrial and automotive applications, making it versatile for various projects. Overall, the S29GL064S90TFA043 is a robust choice for applications requiring reliable flash memory with advanced features.