Infineon Technologies AG Memory S29GL064S90BHI040

The S29GL064S90BHI040 is a 64 Mb (8 MB) NOR Flash memory device from Quarktwin Technology Ltd., designed for parallel operation at a voltage of 3.0 V. It features a CMOS core and is manufactured using 65-nm MIRRORBIT,Ñ¢ technology, ensuring high reliability and performance. The device supports a flexible sector architecture, allowing for 128 sectors of 32 Kwords (64 KB) each, with options for boot sectors. This memory device offers a fast access time of 70 ns and includes an 8-word/16-byte page read buffer, enhancing read performance. It supports a minimum of 100,000 erase cycles per sector and has a typical data retention of 20 years. The S29GL064S90BHI040 incorporates advanced error checking and correction (ECC) capabilities, along with features for sector protection, including persistent and password protection. The device operates within an industrial temperature range of -40°C to +85°C, with options for higher temperature ratings. It is compatible with JEDEC standards, ensuring ease of integration into existing systems. The package options include 48-pin and 56-pin TSOP, as well as various BGA configurations, providing flexibility for different design requirements. Overall, this memory device is suitable for applications requiring reliable, high-performance flash memory with robust data protection features.