The S29GL064N11FFIS13 is a 64 Mbit NOR Flash memory device from Quarktwin Technology Ltd., utilizing 110 nm MirrorBit technology. It is organized as 4,194,304 words or 8,388,608 bytes and operates on a single 3.0-Volt power supply. The device features a 16-bit wide data bus, which can also function as an 8-bit bus using the BYTE# input. Access times are as fast as 90 ns, with a typical read current of 25 mA and a standby current of 1 µA. This memory device supports advanced sector protection features, including Persistent Sector Protection and Password Sector Protection, allowing for secure data management. It also includes program and erase suspend capabilities, enabling the reading or programming of other sectors during ongoing operations. The device is compatible with JEDEC standards and offers a flexible sector architecture, with 128 sectors of 32 Kwords (64 KB) each. The S29GL064N11FFIS13 is available in multiple package options, including 48-pin TSOP and 64-ball Fortified BGA, making it suitable for various applications. It is designed for high reliability, with a typical endurance of 100,000 erase cycles and a data retention period of 20 years.
IC FLASH 64MBIT PARALLEL 64FBGA Product overview: S29GL064N11FFIS13 from Infineon Technologies is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-S29GL064N11FFIS1
FLASH - NOR Memory IC 64Mb (8M x 8, 4M x 16) Parallel 110ns 64-FBGA (13x11)
IC FLASH 64MBIT PARALLEL 64FBGA
FLASH - NOR Memory IC 64Mbit Parallel 110 ns 64-FBGA (13x11)
| ERSAELECTRONICS PTE. LTD. | DigiKey | Lingto Electronic Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-S29GL064N11FFIS13 | S29GL064N11FFIS13-ND | S29GL064N11FFIS13 | S29GL064N11FFIS13 |
| Product Name | Memory IC and Storage Component | Memory | Memory | Memory |
| Memory Category | Flash; Non-Volatile | Flash | Flash; Flash | Flash; FLASH |
| Access Time | 110 ns | 110 ns | 110 ns | |
| Cycle Time | 110 ns | |||
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) |
