The S29GL01GT10FAI030 is a 1 Gb (128 MB) NOR Flash memory device from Quarktwin Technology Ltd., utilizing 45-nm MIRRORBIT,Ñ¢ technology. It operates with a single supply voltage ranging from 2.7 V to 3.6 V and features a fast page access time of 15 ns and random access time of 100 ns. The device includes a 512-byte programming buffer, allowing for efficient programming of up to 256 words in a single operation, making it suitable for embedded applications that demand high performance and low power consumption. This memory device supports a versatile I/O voltage range from 1.65 V to V_CC and offers both vó8 and vó16 data bus configurations. It features automatic error checking and correction (ECC) for single-bit errors, sector erase capabilities with uniform 128-KB sectors, and advanced sector protection methods. The S29GL01GT10FAI030 is rated for 100,000 program/erase cycles and provides a data retention period of 20 years. The device is available in various packaging options, including 56-pin TSOP and multiple BGA configurations. It operates across a wide temperature range, with industrial grades from ,Äì40¬8C to +125¬8C, making it suitable for diverse applications.
S29GL01GT - 1-Gbit (128 Mbyte), 3.0V, GL-T Eclipse Flash Memory
FLASH - NOR Memory IC 1Gb (128M x 8) Parallel 100ns 64-FBGA (13x11)
IC FLASH 1GBIT PARALLEL 64FBGA Product overview: S29GL01GT10FAI030 from Infineon Technologies is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-S29GL01GT10FAI03
IC FLASH 1GBIT PARALLEL 64FBGA
FLASH - NOR Memory IC 1Gbit Parallel 100 ns 64-FBGA (13x11)
| Rochester Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Lingto Electronic Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | S29GL01GT10FAI030 | S29GL01GT10FAI030-ND | 774-S29GL01GT10FAI030 | S29GL01GT10FAI030 | S29GL01GT10FAI030 |
| Product Name | Memory | Memory IC and Storage Component | Memory | Memory | |
| Memory Category | Flash | Flash | Flash | Flash; Flash | Flash; FLASH |
| Logic Family | ECL | ||||
| Package Type | BGA; P-LFBGA-64 | 64-LBGA | BGA; 64-LBGA | ||
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 C (-40 F) | -40 to 85 C (-40 to 185 F) | ||
| Supply Voltage | 2.7V ~ 3.6V | -3.3V; 2.7 | 3.6V; 2.7V ~ 3.6V |
