Infineon Technologies AG Memory S29CD032J0PFFM010

Description
FLASH - NOR Memory IC 32Mbit Parallel 66 MHz 54 ns 80-FBGA (13x11)
Description
FLASH - NOR Memory IC 32Mbit Parallel 66 MHz 54 ns 80-FBGA (13x11)
Datasheet
Datasheet Summary
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The S29CD032J0PFFM010 is a 32 Mbit NOR Flash memory device from Quarktwin Technology Ltd., designed for high-performance applications. It operates at a voltage range of 2.6V to 3.3V and supports simultaneous read and write operations with zero latency across two separate banks. The device features a burst mode capable of operating up to 75 MHz, making it suitable for demanding automotive applications. This memory device utilizes 110-nm Floating Gate technology and offers a flexible sector architecture, including various sector sizes for efficient memory management. It includes a dual boot sector configuration and supports a 32-bit data bus. The S29CD032J0PFFM010 also features advanced sector protection methods, a secured silicon sector, and a command set compatible with the JEDEC standard. Typical program and erase times are 18 µs and 1.0 s, respectively, with a cycling endurance of up to 1 million write cycles per sector. The device is available in multiple package options, including an 80-pin PQFP and an 80-ball fortified BGA, with a Pb-free package option available. Its extended temperature range and 20-year data retention make it a reliable choice for various applications.

Datasheet Summary
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The S29CD032J0PFFM010 is a 32 Mbit NOR Flash memory device from Quarktwin Technology Ltd., designed for high-performance applications. It operates at a voltage range of 2.6V to 3.3V and supports simultaneous read and write operations with zero latency across two separate banks. The device features a burst mode capable of operating up to 75 MHz, making it suitable for demanding automotive applications. This memory device utilizes 110-nm Floating Gate technology and offers a flexible sector architecture, including various sector sizes for efficient memory management. It includes a dual boot sector configuration and supports a 32-bit data bus. The S29CD032J0PFFM010 also features advanced sector protection methods, a secured silicon sector, and a command set compatible with the JEDEC standard. Typical program and erase times are 18 µs and 1.0 s, respectively, with a cycling endurance of up to 1 million write cycles per sector. The device is available in multiple package options, including an 80-pin PQFP and an 80-ball fortified BGA, with a Pb-free package option available. Its extended temperature range and 20-year data retention make it a reliable choice for various applications.

Suppliers

Company
Product
Description
Supplier Links
Memory - S29CD032J0PFFM010 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 32Mbit Parallel 66 MHz 54 ns 80-FBGA (13x11)

FLASH - NOR Memory IC 32Mbit Parallel 66 MHz 54 ns 80-FBGA (13x11)

Buy Now Datasheet
IC FLASH 32MBIT PARALLEL 80FBGA

IC FLASH 32MBIT PARALLEL 80FBGA

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips
Product Number S29CD032J0PFFM010 S29CD032J0PFFM010
Product Name Memory Memory
Memory Category Flash; FLASH Flash; Flash
Access Time 54 ns 54 ns
Operating Temperature -40 to 125 C (-40 to 257 F)
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