Infineon Technologies AG Memory S29CD032J0PFFM010

Description
IC FLASH 32MBIT PARALLEL 80FBGA
Description
IC FLASH 32MBIT PARALLEL 80FBGA
Datasheet
Datasheet Summary
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The S29CD032J0PFFM010 is a 32 Mbit NOR Flash memory device from Quarktwin Technology Ltd., designed for high-performance applications. It operates at a voltage range of 2.6V to 3.3V and supports simultaneous read and write operations with zero latency across two separate banks. The device features a burst mode capable of operating up to 75 MHz, making it suitable for demanding automotive applications. This memory device utilizes 110-nm Floating Gate technology and offers a flexible sector architecture, including various sector sizes for efficient memory management. It includes a dual boot sector configuration and supports a 32-bit data bus. The S29CD032J0PFFM010 also features advanced sector protection methods, a secured silicon sector, and a command set compatible with the JEDEC standard. Typical program and erase times are 18 µs and 1.0 s, respectively, with a cycling endurance of up to 1 million write cycles per sector. The device is available in multiple package options, including an 80-pin PQFP and an 80-ball fortified BGA, with a Pb-free package option available. Its extended temperature range and 20-year data retention make it a reliable choice for various applications.

Datasheet Summary
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The S29CD032J0PFFM010 is a 32 Mbit NOR Flash memory device from Quarktwin Technology Ltd., designed for high-performance applications. It operates at a voltage range of 2.6V to 3.3V and supports simultaneous read and write operations with zero latency across two separate banks. The device features a burst mode capable of operating up to 75 MHz, making it suitable for demanding automotive applications. This memory device utilizes 110-nm Floating Gate technology and offers a flexible sector architecture, including various sector sizes for efficient memory management. It includes a dual boot sector configuration and supports a 32-bit data bus. The S29CD032J0PFFM010 also features advanced sector protection methods, a secured silicon sector, and a command set compatible with the JEDEC standard. Typical program and erase times are 18 µs and 1.0 s, respectively, with a cycling endurance of up to 1 million write cycles per sector. The device is available in multiple package options, including an 80-pin PQFP and an 80-ball fortified BGA, with a Pb-free package option available. Its extended temperature range and 20-year data retention make it a reliable choice for various applications.

Suppliers

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Product
Description
Supplier Links
IC FLASH 32MBIT PARALLEL 80FBGA

IC FLASH 32MBIT PARALLEL 80FBGA

Supplier's Site Datasheet
Memory - S29CD032J0PFFM010 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 32Mbit Parallel 66 MHz 54 ns 80-FBGA (13x11)

FLASH - NOR Memory IC 32Mbit Parallel 66 MHz 54 ns 80-FBGA (13x11)

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Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number S29CD032J0PFFM010 S29CD032J0PFFM010
Product Name Memory Memory
Memory Category Flash; Flash Flash; FLASH
Access Time 54 ns 54 ns
Density 32000 kbits 32000 kbits
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