Infineon Technologies AG Memory S28HS02GTFPBHB050

The S28HS02GTFPBHB050 is a 2Gb NOR Flash memory device from Quarktwin Technology Ltd., utilizing Infineon,Äôs 45-nm MIRRORBIT,Ñ¢ technology. It features an octal interface that operates at both 1.8V and 3.0V, supporting high-speed data transfer rates of up to 332 MBps in DDR mode. The device is available in a 24-ball BGA package measuring 8 vó 8 mm and is designed for a wide range of applications, including industrial and automotive environments, with temperature grades ranging from -40 °C to +125 °C. This memory device offers a flexible sector architecture, allowing for uniform and hybrid configurations, and includes a page programming buffer of either 256 or 512 bytes. It is compliant with JEDEC eXpanded SPI standards and features robust safety and protection mechanisms, including ISO26262 ASIL B compliance, built-in error correcting code (ECC), and sector erase status indicators. The S28HS02GTFPBHB050 ensures high endurance with a minimum of 2,560,000 program-erase cycles and a data retention period of at least 25 years, making it suitable for applications requiring reliability and longevity.