Infineon Technologies AG Memory S26KS512SDABHM030

Description
FLASH - NOR Memory IC 512Mb (64M x 8) Parallel 100MHz 96ns 24-FBGA (6x8)
Request a Quote Datasheet
Description
FLASH - NOR Memory IC 512Mb (64M x 8) Parallel 100MHz 96ns 24-FBGA (6x8)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - S26KS512SDABHM030-ND - DigiKey
Thief River Falls, MN, United States
FLASH - NOR Memory IC 512Mb (64M x 8) Parallel 100MHz 96ns 24-FBGA (6x8)

FLASH - NOR Memory IC 512Mb (64M x 8) Parallel 100MHz 96ns 24-FBGA (6x8)

Buy Now Datasheet
Memory - S26KS512SDABHM030 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 512Mbit Parallel 100 MHz 96 ns 24-FBGA (6x8)

FLASH - NOR Memory IC 512Mbit Parallel 100 MHz 96 ns 24-FBGA (6x8)

Buy Now Datasheet
IC FLASH 512MBIT PARALLEL 24FBGA

IC FLASH 512MBIT PARALLEL 24FBGA

Supplier's Site Datasheet

Technical Specifications

  DigiKey Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number S26KS512SDABHM030-ND S26KS512SDABHM030 S26KS512SDABHM030
Product Name Memory Memory Memory
Memory Category Flash Flash; FLASH Flash; Flash
Operating Temperature -40 to 125 C (-40 to 257 F) -40 to 125 C (-40 to 257 F)
Density 512000 kbits 512000 kbits 512000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 00001922424 - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
SDRAM - 2420772 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 20 ns
Number of Words 64000 k
View Details
Memory - CAT28F001T-90B - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category Flash; Flash
Access Time 90 ns
Density 1000 kbits
View Details