IC FLASH 512MBIT PAR 24FBGA Product overview: S26KL512SDABHB020 from Infineon Technologies is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-S26KL512SDABHB02
FLASH - NOR Memory IC 512Mb (64M x 8) Parallel 100MHz 96ns 24-FBGA (6x8)
IC FLASH 512MBIT PARALLEL 24FBGA
FLASH - NOR Memory IC 512Mbit Parallel 100 MHz 96 ns 24-FBGA (6x8)
IC FLASH 512MBIT PARALLEL 24FBGA
| ERSAELECTRONICS PTE. LTD. | DigiKey | Lingto Electronic Limited | Quarktwin Technology Ltd. | ODG (Origin Data Global) | |
|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-S26KL512SDABHB020 | S26KL512SDABHB020-ND | S26KL512SDABHB020 | S26KL512SDABHB020 | S26KL512SDABHB020 |
| Product Name | Memory IC and Storage Component | Memory | Memory | Memory | Memory |
| Memory Category | Flash | Flash | Flash; Flash | Flash; FLASH | Flash; FLASH - NOR |
| Access Time | 96 ns | 96 ns | 96 ns | 96 ns | |
| Endurance | 100000 Write/Erase Cycles | ||||
| Operating Temperature | -40 C (-40 F) | -40 to 105 C (-40 to 221 F) | -40 to 105 C (-40 to 221 F) | -40 to 105 C (-40 to 221 F) | |
| Density | 512000 kbits | 512000 kbits | 512000 kbits | 512000 kbits | 512000 kbits |
