Infineon Technologies AG Memories - Radiation hardened and high-reliability memories - Defense Memories - S25FL512SAGBHEC10 S25FL512SAGBHEC10

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Home // Products // Memories // Radiation hardened and high-reliability memories // Defense Memories // S25FL512SAGBHEC10
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Memories - Radiation hardened and high-reliability memories - Defense Memories - S25FL512SAGBHEC10 - S25FL512SAGBHEC10 - Infineon Technologies AG
Neubiberg, Germany
Memories - Radiation hardened and high-reliability memories - Defense Memories - S25FL512SAGBHEC10
S25FL512SAGBHEC10
Memories - Radiation hardened and high-reliability memories - Defense Memories - S25FL512SAGBHEC10 S25FL512SAGBHEC10
Home // Products // Memories // Radiation hardened and high-reliability memories // Defense Memories // S25FL512SAGBHEC10

Home // Products // Memories // Radiation hardened and high-reliability memories // Defense Memories // S25FL512SAGBHEC10

Supplier's Site Datasheet
Memory - 448-S25FL512SAGBHEC10-ND - DigiKey
Thief River Falls, MN, United States
FLASH - NOR Memory IC 512Mb (64M x 8) SPI - Quad I/O 133MHz 24-BGA (8x6)

FLASH - NOR Memory IC 512Mb (64M x 8) SPI - Quad I/O 133MHz 24-BGA (8x6)

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Memory - S25FL512SAGBHEC10 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 512Mbit SPI - Quad I/O 133 MHz 24-BGA (8x6)

FLASH - NOR Memory IC 512Mbit SPI - Quad I/O 133 MHz 24-BGA (8x6)

Buy Now Datasheet
IC FLASH 512MBIT SPI/QUAD 24BGA

IC FLASH 512MBIT SPI/QUAD 24BGA

Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG DigiKey Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number S25FL512SAGBHEC10 448-S25FL512SAGBHEC10-ND S25FL512SAGBHEC10 S25FL512SAGBHEC10
Product Name Memories - Radiation hardened and high-reliability memories - Defense Memories - S25FL512SAGBHEC10 Memory Memory Memory
Operating Temperature -55 to 125 C (-67 to 257 F) -55 to 125 C (-67 to 257 F) -55 to 125 C (-67 to 257 F)
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