Infineon Technologies AG Memories - Radiation hardened and high-reliability memories - Defense Memories - S25FL512SAGBAEC13 S25FL512SAGBAEC13

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Home // Products // Memories // Radiation hardened and high-reliability memories // Defense Memories // S25FL512SAGBAEC13
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Memories - Radiation hardened and high-reliability memories - Defense Memories - S25FL512SAGBAEC13 - S25FL512SAGBAEC13 - Infineon Technologies AG
Neubiberg, Germany
Memories - Radiation hardened and high-reliability memories - Defense Memories - S25FL512SAGBAEC13
S25FL512SAGBAEC13
Memories - Radiation hardened and high-reliability memories - Defense Memories - S25FL512SAGBAEC13 S25FL512SAGBAEC13
Home // Products // Memories // Radiation hardened and high-reliability memories // Defense Memories // S25FL512SAGBAEC13

Home // Products // Memories // Radiation hardened and high-reliability memories // Defense Memories // S25FL512SAGBAEC13

Supplier's Site Datasheet
Memory - 448-S25FL512SAGBAEC13TR-ND - DigiKey
Thief River Falls, MN, United States
FLASH - NOR Memory IC 512Mb (64M x 8) SPI - Quad I/O 133MHz 24-BGA (8x6)

FLASH - NOR Memory IC 512Mb (64M x 8) SPI - Quad I/O 133MHz 24-BGA (8x6)

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Memory - S25FL512SAGBAEC13 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 512Mbit SPI - Quad I/O 133 MHz 24-BGA (8x6)

FLASH - NOR Memory IC 512Mbit SPI - Quad I/O 133 MHz 24-BGA (8x6)

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IC FLASH 512MBIT SPI/QUAD 24BGA

IC FLASH 512MBIT SPI/QUAD 24BGA

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Technical Specifications

  Infineon Technologies AG DigiKey Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number S25FL512SAGBAEC13 448-S25FL512SAGBAEC13TR-ND S25FL512SAGBAEC13 S25FL512SAGBAEC13
Product Name Memories - Radiation hardened and high-reliability memories - Defense Memories - S25FL512SAGBAEC13 Memory Memory Memory
Operating Temperature -55 to 125 C (-67 to 257 F) -55 to 125 C (-67 to 257 F) -55 to 125 C (-67 to 257 F)
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