Infineon Technologies AG Memories - Radiation hardened and high-reliability memories - Defense Memories - S25FL512SAGBAEA13 S25FL512SAGBAEA13

Description
Home // Products // Memories // Radiation hardened and high-reliability memories // Defense Memories // S25FL512SAGBAEA13
Request a Quote Datasheet
Description
Home // Products // Memories // Radiation hardened and high-reliability memories // Defense Memories // S25FL512SAGBAEA13
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memories - Radiation hardened and high-reliability memories - Defense Memories - S25FL512SAGBAEA13 - S25FL512SAGBAEA13 - Infineon Technologies AG
Neubiberg, Germany
Memories - Radiation hardened and high-reliability memories - Defense Memories - S25FL512SAGBAEA13
S25FL512SAGBAEA13
Memories - Radiation hardened and high-reliability memories - Defense Memories - S25FL512SAGBAEA13 S25FL512SAGBAEA13
Home // Products // Memories // Radiation hardened and high-reliability memories // Defense Memories // S25FL512SAGBAEA13

Home // Products // Memories // Radiation hardened and high-reliability memories // Defense Memories // S25FL512SAGBAEA13

Supplier's Site Datasheet
Memory - 448-S25FL512SAGBAEA13TR-ND - DigiKey
Thief River Falls, MN, United States
FLASH - NOR Memory IC 512Mb (64M x 8) SPI - Quad I/O 133MHz 24-BGA (8x6)

FLASH - NOR Memory IC 512Mb (64M x 8) SPI - Quad I/O 133MHz 24-BGA (8x6)

Buy Now Datasheet
IC FLASH 512MBIT SPI/QUAD 24BGA

IC FLASH 512MBIT SPI/QUAD 24BGA

Supplier's Site Datasheet
Memory - S25FL512SAGBAEA13 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 512Mbit SPI - Quad I/O 133 MHz 24-BGA (8x6)

FLASH - NOR Memory IC 512Mbit SPI - Quad I/O 133 MHz 24-BGA (8x6)

Buy Now Datasheet

Technical Specifications

  Infineon Technologies AG DigiKey Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number S25FL512SAGBAEA13 448-S25FL512SAGBAEA13TR-ND S25FL512SAGBAEA13 S25FL512SAGBAEA13
Product Name Memories - Radiation hardened and high-reliability memories - Defense Memories - S25FL512SAGBAEA13 Memory Memory Memory
Operating Temperature -55 to 125 C (-67 to 257 F) -55 to 125 C (-67 to 257 F) -55 to 125 C (-67 to 257 F)
Unlock Full Specs
to access all available technical data

Similar Products

Quad Memory IC and Storage Component - 774-S25FL064LABNFB010 - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category Flash
Access Time 8 ns
Endurance 100000 Write/Erase Cycles
View Details
5 suppliers
Memory IC and Storage Component - 774-AM29F002BT-55JF - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category Flash; Non-Volatile
Access Time 55 ns
Cycle Time 55 ns
View Details
4 suppliers
Memory - IS29GL128S-10DHV013 - Lingto Electronic Limited
Infineon Technologies AG
Specs
Memory Category Flash; Flash
Access Time 100 ns
Density 128000 kbits
View Details
2 suppliers