Infineon Technologies AG Memory S25FL064LABNFB043

Description
S25FL064L - (8-MB), 3.0V FL-L SPI Flash Memory
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Description
S25FL064L - (8-MB), 3.0V FL-L SPI Flash Memory
Request a Quote
Datasheet
Datasheet Summary
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The S25FL064LABNFB043 is a 64 Mb (8 MB) FL-L flash memory device from Quarktwin Technology Ltd., utilizing floating gate technology and a 65-nm process. It connects to host systems via a serial peripheral interface (SPI) and supports multiple I/O modes, including single, dual, and quad I/O, as well as Quad Peripheral Interface (QPI) commands. The device features a page programming buffer capable of programming up to 256 bytes in one operation and offers various erase options, including 4 KB sector, 32 KB half block, 64 KB block, and chip erase. This memory device is designed for high performance, with maximum read rates of up to 108 MHz for fast read and quad read operations, and it supports Double Data Rate (DDR) read commands. It has a minimum endurance of 100,000 program-erase cycles and a data retention period of at least 20 years. The operating voltage range is from 2.7 V to 3.6 V, and it is available in various package types, including SOIC and BGA formats. The S25FL064LABNFB043 is suitable for mobile and embedded applications, providing a compact storage solution with flexibility and performance that exceeds traditional serial flash devices. It also includes security features such as block protection and status register protection, making it a reliable choice for applications requiring secure data storage.

Datasheet Summary
Powered by GS/AI

The S25FL064LABNFB043 is a 64 Mb (8 MB) FL-L flash memory device from Quarktwin Technology Ltd., utilizing floating gate technology and a 65-nm process. It connects to host systems via a serial peripheral interface (SPI) and supports multiple I/O modes, including single, dual, and quad I/O, as well as Quad Peripheral Interface (QPI) commands. The device features a page programming buffer capable of programming up to 256 bytes in one operation and offers various erase options, including 4 KB sector, 32 KB half block, 64 KB block, and chip erase. This memory device is designed for high performance, with maximum read rates of up to 108 MHz for fast read and quad read operations, and it supports Double Data Rate (DDR) read commands. It has a minimum endurance of 100,000 program-erase cycles and a data retention period of at least 20 years. The operating voltage range is from 2.7 V to 3.6 V, and it is available in various package types, including SOIC and BGA formats. The S25FL064LABNFB043 is suitable for mobile and embedded applications, providing a compact storage solution with flexibility and performance that exceeds traditional serial flash devices. It also includes security features such as block protection and status register protection, making it a reliable choice for applications requiring secure data storage.

Suppliers

Company
Product
Description
Supplier Links
 - S25FL064LABNFB043 - Rochester Electronics
Newburyport, MA, United States
S25FL064L - (8-MB), 3.0V FL-L SPI Flash Memory

S25FL064L - (8-MB), 3.0V FL-L SPI Flash Memory

Supplier's Site Datasheet
Memory - 448-S25FL064LABNFB043TR-ND - DigiKey
Thief River Falls, MN, United States
FLASH - NOR Memory IC 64Mb (8M x 8) SPI - Quad I/O, QPI 108MHz 8-USON (4x4)

FLASH - NOR Memory IC 64Mb (8M x 8) SPI - Quad I/O, QPI 108MHz 8-USON (4x4)

Buy Now Datasheet
Memory - S25FL064LABNFB043 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 64Mbit SPI - Quad I/O, QPI 108 MHz 8-USON (4x4)

FLASH - NOR Memory IC 64Mbit SPI - Quad I/O, QPI 108 MHz 8-USON (4x4)

Buy Now Datasheet
IC FLASH 64MBIT SPI/QUAD 8USON

IC FLASH 64MBIT SPI/QUAD 8USON

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics DigiKey Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number S25FL064LABNFB043 448-S25FL064LABNFB043TR-ND S25FL064LABNFB043 S25FL064LABNFB043
Product Name Memory Memory Memory
Memory Category Flash Flash Flash; FLASH Flash; Flash
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