Infineon Technologies AG Memory IS29GL01GS-11TFV02-TR

The IS29GL01GS-11TFV02-TR is a 1 Gb NOR Flash memory device from Quarktwin Technology Ltd., utilizing 65-nm MIRRORBIT,Ñ¢ Eclipse technology. It operates with a single supply voltage ranging from 2.7 V to 3.6 V and features a versatile I/O voltage range from 1.65 V to V_CC. The device supports a vó16 data bus and offers fast access times, with a page access time as low as 15 ns and random access time of 90 ns. This memory device includes a 512-byte programming buffer, allowing for efficient programming of up to 512 bytes in a single operation. It supports automatic error checking and correction (ECC) with single-bit error correction, sector erase capabilities with uniform 128-kbyte sectors, and advanced sector protection methods. The IS29GL01GS-11TFV02-TR is rated for 100,000 program/erase cycles and has a data retention period of 20 years. The product is available in multiple packaging options, including a 56-pin TSOP and various BGA configurations. It is suitable for industrial applications with operating temperature grades ranging from -40¬8C to +105¬8C, making it a robust choice for embedded systems requiring high density and performance.