Infineon Technologies AG Electronic Surplus - IRFH8202TRPBF IRFH8202TRPBF

Description
Manufacturer: Infineon Technologies Win Source Part Number: 1187622-IRFH8202TRPB F Packaging: Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Family Name: IRFH8202 Categories: Discrete Semiconductor Products Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: 8-PowerTDFN Power Dissipation (Maximum): 3.6W, 160W Introduction Date: October 15, 2008 ECCN: EAR99 Country of Origin: China, Malaysia Estimated EOL Date: 2027 Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 25V Id - Continuous Drain Current: 47A, 100A Rds On (Maximum) at Id, Vgs: 1.05mOhm at 50A, 10V Gate Source Voltage(th) (Maximum) at Id: 2.35V at 150μA Gate Charge (Qg) (Maximum) at Vgs: 110nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 7174pF at 13V
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 1187622-IRFH8202TRPB F Packaging: Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Family Name: IRFH8202 Categories: Discrete Semiconductor Products Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: 8-PowerTDFN Power Dissipation (Maximum): 3.6W, 160W Introduction Date: October 15, 2008 ECCN: EAR99 Country of Origin: China, Malaysia Estimated EOL Date: 2027 Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 25V Id - Continuous Drain Current: 47A, 100A Rds On (Maximum) at Id, Vgs: 1.05mOhm at 50A, 10V Gate Source Voltage(th) (Maximum) at Id: 2.35V at 150μA Gate Charge (Qg) (Maximum) at Vgs: 110nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 7174pF at 13V
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Electronic Surplus - IRFH8202TRPBF - 1187622-IRFH8202TRPBF - Win Source Electronics
Laguna Hills, CA, United States
Electronic Surplus - IRFH8202TRPBF
1187622-IRFH8202TRPBF
Electronic Surplus - IRFH8202TRPBF 1187622-IRFH8202TRPBF
Manufacturer: Infineon Technologies Win Source Part Number: 1187622-IRFH8202TRPB F Packaging: Reel Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Family Name: IRFH8202 Categories: Discrete Semiconductor Products Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.irf.com Manufacturer Package: 8-PowerTDFN Power Dissipation (Maximum): 3.6W, 160W Introduction Date: October 15, 2008 ECCN: EAR99 Country of Origin: China, Malaysia Estimated EOL Date: 2027 Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 25V Id - Continuous Drain Current: 47A, 100A Rds On (Maximum) at Id, Vgs: 1.05mOhm at 50A, 10V Gate Source Voltage(th) (Maximum) at Id: 2.35V at 150μA Gate Charge (Qg) (Maximum) at Vgs: 110nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 7174pF at 13V

Manufacturer: Infineon Technologies
Win Source Part Number: 1187622-IRFH8202TRPBF
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Family Name: IRFH8202
Categories: Discrete Semiconductor Products
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.irf.com
Manufacturer Package: 8-PowerTDFN
Power Dissipation (Maximum): 3.6W, 160W
Introduction Date: October 15, 2008
ECCN: EAR99
Country of Origin: China, Malaysia
Estimated EOL Date: 2027
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 25V
Id - Continuous Drain Current: 47A, 100A
Rds On (Maximum) at Id, Vgs: 1.05mOhm at 50A, 10V
Gate Source Voltage(th) (Maximum) at Id: 2.35V at 150μA
Gate Charge (Qg) (Maximum) at Vgs: 110nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 7174pF at 13V

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Technical Specifications

  Win Source Electronics
Product Category Uncategorized Products
Product Number 1187622-IRFH8202TRPBF
Product Name Electronic Surplus - IRFH8202TRPBF
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