MOSFET N-CH 650V 5.2A SOT223 Product overview: IPN65R1K5CEATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 5.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 5.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPN65R1K5CEATMA1
Small Signal Field-Effect Transistor
N-Channel 650V 5.2A (Tc) 5W (Tc) Surface Mount PG-SOT223
Win Source Part Number: 1157638-IPN65R1K5CEA
Category: Discrete Semiconductor Products>Transistors
Series: CoolMOS™ CE
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Power Dissipation (Max): 5W (Tc)
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: PG-SOT223
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V
Vgs (Max): ±20V
Temperature Range - Operating: -40°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): IPN65R1K5CE; SP001461234;
ECCN: EAR99
Fake Threat In the Open Market: 73 pct.
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: IPN65R1K5CEATMA1DKR,
Base Product Number: IPN65R1
Product Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET N-CH 650V 5.2A SOT223
MOSFET, N-CH, 650V, 5.2A, SOT-223-3; Transistor Polarity:N Channel; Continuous Drain Current Id:5.2A; Drain Source Voltage Vds:650V; On Resistance Rds(on):1.35ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | Rochester Electronics | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | RF MOSFET Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IPN65R1K5CEATMA1 | IPN65R1K5CEATMA1 | IPN65R1K5CEATMA1TR-ND | 1157638-IPN65R1K5CEATMA1 | IPN65R1K5CEATMA1 | IPN65R1K5CEATMA1 | 97Y1836 |
| Product Name | 650V 5.2A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 650V, 5.2A, Sot-223-3; Transistor Polarity Infineon | |
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 650 volts | ||||||
| PD | 5000 milliwatts | 5000 milliwatts | |||||
| TJ | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) | |||||
| Package Type | Tape & Reel (TR) | PG-SOT223-3 | TO-261-4, TO-261AA | SOT3 | Surface Mount | TO-3; SOT223 |
