Infineon Technologies AG Single FETs, MOSFETs IPN65R1K5CEATMA1

Description
Small Signal Field-Effect Transistor
Request a Quote Datasheet
Description
Small Signal Field-Effect Transistor
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - IPN65R1K5CEATMA1 - Rochester Electronics
Newburyport, MA, United States
Small Signal Field-Effect Transistor

Small Signal Field-Effect Transistor

Supplier's Site Datasheet
Single FETs, MOSFETs - IPN65R1K5CEATMA1TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPN65R1K5CEATMA1TR-ND
Single FETs, MOSFETs IPN65R1K5CEATMA1TR-ND
N-Channel 650V 5.2A (Tc) 5W (Tc) Surface Mount PG-SOT223

N-Channel 650V 5.2A (Tc) 5W (Tc) Surface Mount PG-SOT223

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1157638-IPN65R1K5CEATMA1 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1157638-IPN65R1K5CEATMA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1157638-IPN65R1K5CEATMA1
Win Source Part Number: 1157638-IPN65R1K5CEA TMA1 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: CoolMOS™ CE Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 3.5V @ 100µA Power Dissipation (Max): 5W (Tc) Package / Case: TO-261-4, TO-261AA Supplier Device Package: PG-SOT223 Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V Vgs (Max): ±20V Temperature Range - Operating: -40°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): IPN65R1K5CE; SP001461234; ECCN: EAR99 Fake Threat In the Open Market: 73 pct. MSL Level: 3 (168 Hours) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Other Names: IPN65R1K5CEATMA1DKR, IPN65R1K5CEATMA1TR,I PN65R1K5CEATMA1CT,SP 001461234,IPN65R1K5C EATMA1-ND Base Product Number: IPN65R1 Product Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1157638-IPN65R1K5CEATMA1
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: CoolMOS™ CE
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Power Dissipation (Max): 5W (Tc)
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: PG-SOT223
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V
Vgs (Max): ±20V
Temperature Range - Operating: -40°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): IPN65R1K5CE; SP001461234;
ECCN: EAR99
Fake Threat In the Open Market: 73 pct.
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: IPN65R1K5CEATMA1DKR,IPN65R1K5CEATMA1TR,IPN65R1K5CEATMA1CT,SP001461234,IPN65R1K5CEATMA1-ND
Base Product Number: IPN65R1
Product Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Singapore, Singapore
650V 5.2A MOSFET Transistor
278-IPN65R1K5CEATMA1
650V 5.2A MOSFET Transistor 278-IPN65R1K5CEATMA1
MOSFET N-CH 650V 5.2A SOT223 Product overview: IPN65R1K5CEATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 5.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 5.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPN65R1K5CEATMA1 can be used for catalog matching and distributor lookup.

MOSFET N-CH 650V 5.2A SOT223 Product overview: IPN65R1K5CEATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 5.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 5.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPN65R1K5CEATMA1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Mosfet, N-Ch, 650V, 5.2A, Sot-223-3; Transistor Polarity Infineon - 97Y1836 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 650V, 5.2A, Sot-223-3; Transistor Polarity Infineon
97Y1836
Mosfet, N-Ch, 650V, 5.2A, Sot-223-3; Transistor Polarity Infineon 97Y1836
MOSFET, N-CH, 650V, 5.2A, SOT-223-3; Transistor Polarity:N Channel; Continuous Drain Current Id:5.2A; Drain Source Voltage Vds:650V; On Resistance Rds(on):1.35ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes

MOSFET, N-CH, 650V, 5.2A, SOT-223-3; Transistor Polarity:N Channel; Continuous Drain Current Id:5.2A; Drain Source Voltage Vds:650V; On Resistance Rds(on):1.35ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes

Supplier's Site
MOSFET CONSUMER

MOSFET CONSUMER

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IPN65R1K5CEATMA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IPN65R1K5CEATMA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IPN65R1K5CEATMA1
MOSFET N-CH 650V 5.2A SOT223

MOSFET N-CH 650V 5.2A SOT223

Supplier's Site

Technical Specifications

  Rochester Electronics DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category RF MOSFET Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IPN65R1K5CEATMA1 IPN65R1K5CEATMA1TR-ND 1157638-IPN65R1K5CEATMA1 278-IPN65R1K5CEATMA1 97Y1836 IPN65R1K5CEATMA1 IPN65R1K5CEATMA1
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 650V 5.2A MOSFET Transistor Mosfet, N-Ch, 650V, 5.2A, Sot-223-3; Transistor Polarity Infineon MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type PG-SOT223-3 TO-261-4, TO-261AA SOT3 Tape & Reel (TR) TO-3; SOT223 Surface Mount
Packing Method Tape Reel; Tape & Reel Tape & Reel (TR) Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
Polarity N-Channel N-Channel
PD 5000 milliwatts 5000 milliwatts
TJ -40 to 150 C (-40 to 302 F) -40 to 150 C (-40 to 302 F)
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