Infineon Technologies AG Power - Diode & Thyristor (Si/SiC) - CoolSiC™ Schottky Diodes - IDYH25G200C5 IDYH25G200C5

Description
CoolSiC™ Schottky diode 2000 V, 25 A generation 5 in a TO-247PLUS-4 HCC package enables higher efficiency and design simplification in high DC link systems up to 1500 VDC. The extended 14 mm creepage and 5.4 mm clearance distances of the new TO-247PLUS-4 HCC package offer extra safety in harsh environments. The diode offers first-class thermal performance thanks to the .XT interconnection technology and is highly resistant to humidity. The diode is the perfect fit for the matching CoolSiC™ MOSFET 2000 V portfolio. Summary of Features VRRM = 2000 V IF = 25 A VF = 1.5 V No reverse recovery current No forward recovery High surge current capability Temperature independent switch behavior Low forward voltage Tight forward voltage distribution Specified dv/dt ruggedness .XT interconnection technology Benefits High DC-link systems up to 1500 VDC Minimized conduction losses No reverse recovery current High power with half the part count Topology simplification Increased reliability Applications 3-phase string inverter solutions EV charging
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Description
CoolSiC™ Schottky diode 2000 V, 25 A generation 5 in a TO-247PLUS-4 HCC package enables higher efficiency and design simplification in high DC link systems up to 1500 VDC. The extended 14 mm creepage and 5.4 mm clearance distances of the new TO-247PLUS-4 HCC package offer extra safety in harsh environments. The diode offers first-class thermal performance thanks to the .XT interconnection technology and is highly resistant to humidity. The diode is the perfect fit for the matching CoolSiC™ MOSFET 2000 V portfolio. Summary of Features VRRM = 2000 V IF = 25 A VF = 1.5 V No reverse recovery current No forward recovery High surge current capability Temperature independent switch behavior Low forward voltage Tight forward voltage distribution Specified dv/dt ruggedness .XT interconnection technology Benefits High DC-link systems up to 1500 VDC Minimized conduction losses No reverse recovery current High power with half the part count Topology simplification Increased reliability Applications 3-phase string inverter solutions EV charging
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Power - Diode & Thyristor (Si/SiC) - CoolSiC™ Schottky Diodes - IDYH25G200C5 - IDYH25G200C5 - Infineon Technologies AG
Neubiberg, Germany
Power - Diode & Thyristor (Si/SiC) - CoolSiC™ Schottky Diodes - IDYH25G200C5
IDYH25G200C5
Power - Diode & Thyristor (Si/SiC) - CoolSiC™ Schottky Diodes - IDYH25G200C5 IDYH25G200C5
CoolSiC™ Schottky diode 2000 V, 25 A generation 5 in a TO-247PLUS-4 HCC package enables higher efficiency and design simplification in high DC link systems up to 1500 VDC. The extended 14 mm creepage and 5.4 mm clearance distances of the new TO-247PLUS-4 HCC package offer extra safety in harsh environments. The diode offers first-class thermal performance thanks to the .XT interconnection technology and is highly resistant to humidity. The diode is the perfect fit for the matching CoolSiC™ MOSFET 2000 V portfolio. Summary of Features VRRM = 2000 V IF = 25 A VF = 1.5 V No reverse recovery current No forward recovery High surge current capability Temperature independent switch behavior Low forward voltage Tight forward voltage distribution Specified dv/dt ruggedness .XT interconnection technology Benefits High DC-link systems up to 1500 VDC Minimized conduction losses No reverse recovery current High power with half the part count Topology simplification Increased reliability Applications 3-phase string inverter solutions EV charging

CoolSiC™ Schottky diode 2000 V, 25 A generation 5 in a TO-247PLUS-4 HCC package enables higher efficiency and design simplification in high DC link systems up to 1500 VDC. The extended 14 mm creepage and 5.4 mm clearance distances of the new TO-247PLUS-4 HCC package offer extra safety in harsh environments.

The diode offers first-class thermal performance thanks to the .XT interconnection technology and is highly resistant to humidity. The diode is the perfect fit for the matching CoolSiC™ MOSFET 2000 V portfolio.


Summary of Features

  • VRRM = 2000 V
  • IF = 25 A
  • VF = 1.5 V
  • No reverse recovery current
  • No forward recovery
  • High surge current capability
  • Temperature independent switch behavior
  • Low forward voltage
  • Tight forward voltage distribution
  • Specified dv/dt ruggedness
  • .XT interconnection technology

Benefits

  • High DC-link systems up to 1500 VDC
  • Minimized conduction losses
  • No reverse recovery current
  • High power with half the part count
  • Topology simplification
  • Increased reliability

Applications

  • 3-phase string inverter solutions
  • EV charging
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Schottky Diodes
Product Number IDYH25G200C5
Product Name Power - Diode & Thyristor (Si/SiC) - CoolSiC™ Schottky Diodes - IDYH25G200C5
Life Cycle Stage active and preferred
Package PG-TO247-4
RoHS Compliant RoHS
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