CoolSiC™ Schottky diode 2000 V, 10 A generation 5 in a TO-247-2 package enables higher efficiency and design simplification in high DC link systems up to 1500 VDC. The diode offers first-class thermal performance thanks to the .XT interconnection technology and is highly robust against humidity demonstrated in HV-H3TRB reliability tests. The diode exhibits neither reverse recovery current nor forward recovery and feature a low forward voltage, ensuring enhanced system performance.
The diode is the perfect fit for the matching CoolSiC™ MOSFET 2000 V portfolio.
Summary of Features
VRRM = 2000 V
IF = 10 A
VF = 1.5 V
No reverse recovery current
No forward recovery
High surge current capability
Low forward voltage
Tight forward voltage distribution
Specified dv/dt ruggedness
.XT interconnection technology
Benefits
High power density
Matching MOSFET available
Topology simplification
Applications
EV charging
Photovoltaic
CoolSiC™ Schottky diode 2000 V, 10 A generation 5 in a TO-247-2 package enables higher efficiency and design simplification in high DC link systems up to 1500 VDC. The diode offers first-class thermal performance thanks to the .XT interconnection technology and is highly robust against humidity demonstrated in HV-H3TRB reliability tests. The diode exhibits neither reverse recovery current nor forward recovery and feature a low forward voltage, ensuring enhanced system performance.
The diode is the perfect fit for the matching CoolSiC™ MOSFET 2000 V portfolio.
Summary of Features
- VRRM = 2000 V
- IF = 10 A
- VF = 1.5 V
- No reverse recovery current
- No forward recovery
- High surge current capability
- Low forward voltage
- Tight forward voltage distribution
- Specified dv/dt ruggedness
- .XT interconnection technology
Benefits
- High power density
- Matching MOSFET available
- Topology simplification
Applications
