Infineon Technologies AG Silicon Diodes IDW75D65D1

Description
650 V silicon power diode in TO-247 package Rapid 1 switching 650 V, 75 A emitter controlled power silicon diodes in dual anode configuration and in a TO-247 package, allowing design optimization for more compact dimensions, easier assembly and consequently lower costs. Summary of Features 1.35 V temperature-stable forward voltage (VF) Highest softness-factor for ultimate softness and low EMI filtering Lowest Irrm to provide low turn-on losses on the boost switch For applications switching between 18 kHz and 40 kHz Applications Home appliances Uninterruptible power supplies (UPS)
  • Silicon Diodes - IDW75D65D1 - Infineon Technologies AG
    Infineon Technologies AG
  • Diodes - IDW75D65D1 - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote Datasheet
Description
650 V silicon power diode in TO-247 package Rapid 1 switching 650 V, 75 A emitter controlled power silicon diodes in dual anode configuration and in a TO-247 package, allowing design optimization for more compact dimensions, easier assembly and consequently lower costs. Summary of Features 1.35 V temperature-stable forward voltage (VF) Highest softness-factor for ultimate softness and low EMI filtering Lowest Irrm to provide low turn-on losses on the boost switch For applications switching between 18 kHz and 40 kHz Applications Home appliances Uninterruptible power supplies (UPS)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Silicon Diodes - IDW75D65D1 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
Silicon Diodes
IDW75D65D1
Silicon Diodes IDW75D65D1
650 V silicon power diode in TO-247 package Rapid 1 switching 650 V, 75 A emitter controlled power silicon diodes in dual anode configuration and in a TO-247 package, allowing design optimization for more compact dimensions, easier assembly and consequently lower costs. Summary of Features 1.35 V temperature-stable forward voltage (VF) Highest softness-factor for ultimate softness and low EMI filtering Lowest Irrm to provide low turn-on losses on the boost switch For applications switching between 18 kHz and 40 kHz Applications Home appliances Uninterruptible power supplies (UPS)

650 V silicon power diode in TO-247 package

Rapid 1 switching 650 V, 75 A emitter controlled power silicon diodes in dual anode configuration and in a TO-247 package, allowing design optimization for more compact dimensions, easier assembly and consequently lower costs.


Summary of Features

  • 1.35 V temperature-stable forward voltage (VF)
  • Highest softness-factor for ultimate softness and low EMI filtering
  • Lowest Irrm to provide low turn-on losses on the boost switch
  • For applications switching between 18 kHz and 40 kHz

Applications

  • Home appliances
  • Uninterruptible power supplies (UPS)
Supplier's Site Datasheet
Diodes - IDW75D65D1 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Diodes
IDW75D65D1
Diodes IDW75D65D1
650V Independent Type 1.35V@75A 127ns 150A TO-247-3 Switching Diodes ROHS

650V Independent Type 1.35V@75A 127ns 150A TO-247-3 Switching Diodes ROHS

Supplier's Site

Technical Specifications

  Infineon Technologies AG ODG (Origin Data Global)
Product Category Power Diodes Diodes
Product Number IDW75D65D1 IDW75D65D1
Product Name Silicon Diodes Diodes
RoHS Compliant RoHS RoHS
Package TO-247; PG-TO247-3
VF 1.35 to 1.7 volts
IF 75000 to 150000 mA
Unlock Full Specs
to access all available technical data