CoolSiC™ generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Thanks to the more compact design and thinwafer technology, the family of products shows improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Q c x V f). The CoolSiC™ Generation 5 has been designed to complement our 650V CoolMOS™ families: this ensures meeting the most stringent application requirements in this voltage range.
Summary of Features
V br at 650V
Improved figure of merit (Q c x V f)
No reverse recovery charge
Soft switching reverse recovery waveform
Temperature independent switching behavior
High operating temperature (T j max 175°C)
Improved surge capability
Pb-free lead plating
Benefits
Higher safety margin against overvoltage and complements CoolMOS™ offer
Improved efficiency over all load conditions
Increased efficiency compared to Silicon Diode alternatives
Reduced EMI compared to snappier Silicon diode reverse recovery waveform
Highly stable switching performance
Reduced cooling requirements
Reduced risks of thermal runaway
RoHS compliant
Very high quality and high volume manufacturing capability
Potential Applications
Solar
Uninterruptible power supply (UPS)
Motor control and drives
Applications
Commercial HVAC
Residential air conditioning: Smart (IoT) and efficient cooling
Telecommunication infrastructure
Uninterruptible power supplies (UPS)
Designers who used this product also designed with
1ED3323MC12N | Gate driver ICs
IDP15E65D1 | Silicon Diodes
IDP40E65D2 | Silicon Diodes
IKW15N120H3 | IGBT discretes
IRFB4321 | N-Channel Power MOSFET
IKW30N65WR5 | IGBT discretes
IPZA60R016CM8 | 600 V CoolMOS™ 8
IKW40N65ES5 | IGBT discretes
IRS2186S | Gate driver ICs
1ED3323MC12N | Gate driver ICs
IDP15E65D1 | Silicon Diodes
IDP40E65D2 | Silicon Diodes
IKW15N120H3 | IGBT discretes
IRFB4321 | N-Channel Power MOSFET
IKW30N65WR5 | IGBT discretes
IPZA60R016CM8 | 600 V CoolMOS™ 8
IKW40N65ES5 | IGBT discretes
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CoolSiC™ generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Thanks to the more compact design and thinwafer technology, the family of products shows improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Q c x V f).
The CoolSiC™ Generation 5 has been designed to complement our 650V CoolMOS™ families: this ensures meeting the most stringent application requirements in this voltage range.
Summary of Features
- V br at 650V
- Improved figure of merit (Q c x V f)
- No reverse recovery charge
- Soft switching reverse recovery waveform
- Temperature independent switching behavior
- High operating temperature (T j max 175°C)
- Improved surge capability
- Pb-free lead plating
Benefits
- Higher safety margin against overvoltage and complements CoolMOS™ offer
- Improved efficiency over all load conditions
- Increased efficiency compared to Silicon Diode alternatives
- Reduced EMI compared to snappier Silicon diode reverse recovery waveform
- Highly stable switching performance
- Reduced cooling requirements
- Reduced risks of thermal runaway
- RoHS compliant
- Very high quality and high volume manufacturing capability
Potential Applications
- Solar
- Uninterruptible power supply (UPS)
- Motor control and drives
Applications
- Commercial HVAC
- Residential air conditioning: Smart (IoT) and efficient cooling
- Telecommunication infrastructure
- Uninterruptible power supplies (UPS)
Designers who used this product also designed with
- 1ED3323MC12N |
Gate driver ICs
- IDP15E65D1 |
Silicon Diodes
- IDP40E65D2 |
Silicon Diodes
- IKW15N120H3 |
IGBT discretes
- IRFB4321 |
N-Channel Power MOSFET
- IKW30N65WR5 |
IGBT discretes
- IPZA60R016CM8 |
600 V CoolMOS™ 8
- IKW40N65ES5 |
IGBT discretes
- IRS2186S |
Gate driver ICs
- 1ED3323MC12N |
Gate driver ICs
- IDP15E65D1 |
Silicon Diodes
- IDP40E65D2 |
Silicon Diodes
- IKW15N120H3 |
IGBT discretes
- IRFB4321 |
N-Channel Power MOSFET
- IKW30N65WR5 |
IGBT discretes
- IPZA60R016CM8 |
600 V CoolMOS™ 8
- IKW40N65ES5 |
IGBT discretes
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