Infineon Technologies AG CoolSiC™ Schottky Diodes IDW10G120C5B

Description
1200 V Silicion Carbide Schottky diode in TO-247-3 package The CoolSiC™ Schottky diode generation 5 1200 V, 10 A in a TO-247-3 package, presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already introduced with G2, is now combined with a new merged pn junction improving diode surge current capabilities. The result is a series of products delivering market leading efficiency and more system reliability at an attractive cost point. Summary of Features Best-in-class forward voltage (VF) No reverse recovery charge Mild positive temperature dependency of VF Best-in-class surge current capability Excellent thermal performance Benefits Highest system efficiency Improved system efficiency at low switching frequencies Increased power density at high switching frequencies Higher system reliability Reduced EMI Applications 1-phase string inverter solutions General purpose motor drive - variating frequency and voltage Motor Control Photovoltaic Uninterruptible power supplies (UPS) Designers who used this product also designed with IKW40N65ES5 | IGBT discretes IKQ40N120CH3 | IGBT discretes IKW40N120H3 | IGBT discretes IKW40N65ES5 | IGBT discretes IKQ40N120CH3 | IGBT discretes IKW40N120H3 | IGBT discretes IKW40N65ES5 | IGBT discretes IKQ40N120CH3 | IGBT discretes IKW40N120H3 | IGBT discretes
Request a Quote Datasheet
Description
1200 V Silicion Carbide Schottky diode in TO-247-3 package The CoolSiC™ Schottky diode generation 5 1200 V, 10 A in a TO-247-3 package, presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already introduced with G2, is now combined with a new merged pn junction improving diode surge current capabilities. The result is a series of products delivering market leading efficiency and more system reliability at an attractive cost point. Summary of Features Best-in-class forward voltage (VF) No reverse recovery charge Mild positive temperature dependency of VF Best-in-class surge current capability Excellent thermal performance Benefits Highest system efficiency Improved system efficiency at low switching frequencies Increased power density at high switching frequencies Higher system reliability Reduced EMI Applications 1-phase string inverter solutions General purpose motor drive - variating frequency and voltage Motor Control Photovoltaic Uninterruptible power supplies (UPS) Designers who used this product also designed with IKW40N65ES5 | IGBT discretes IKQ40N120CH3 | IGBT discretes IKW40N120H3 | IGBT discretes IKW40N65ES5 | IGBT discretes IKQ40N120CH3 | IGBT discretes IKW40N120H3 | IGBT discretes IKW40N65ES5 | IGBT discretes IKQ40N120CH3 | IGBT discretes IKW40N120H3 | IGBT discretes
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
CoolSiC™ Schottky Diodes - IDW10G120C5B - Infineon Technologies AG
Neubiberg, Germany
CoolSiC™ Schottky Diodes
IDW10G120C5B
CoolSiC™ Schottky Diodes IDW10G120C5B
1200 V Silicion Carbide Schottky diode in TO-247-3 package The CoolSiC™ Schottky diode generation 5 1200 V, 10 A in a TO-247-3 package, presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already introduced with G2, is now combined with a new merged pn junction improving diode surge current capabilities. The result is a series of products delivering market leading efficiency and more system reliability at an attractive cost point. Summary of Features Best-in-class forward voltage (VF) No reverse recovery charge Mild positive temperature dependency of VF Best-in-class surge current capability Excellent thermal performance Benefits Highest system efficiency Improved system efficiency at low switching frequencies Increased power density at high switching frequencies Higher system reliability Reduced EMI Applications 1-phase string inverter solutions General purpose motor drive - variating frequency and voltage Motor Control Photovoltaic Uninterruptible power supplies (UPS) Designers who used this product also designed with IKW40N65ES5 | IGBT discretes IKQ40N120CH3 | IGBT discretes IKW40N120H3 | IGBT discretes IKW40N65ES5 | IGBT discretes IKQ40N120CH3 | IGBT discretes IKW40N120H3 | IGBT discretes IKW40N65ES5 | IGBT discretes IKQ40N120CH3 | IGBT discretes IKW40N120H3 | IGBT discretes

1200 V Silicion Carbide Schottky diode in TO-247-3 package

The CoolSiC™ Schottky diode generation 5 1200 V, 10 A in a TO-247-3 package, presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already introduced with G2, is now combined with a new merged pn junction improving diode surge current capabilities. The result is a series of products delivering market leading efficiency and more system reliability at an attractive cost point.


Summary of Features

  • Best-in-class forward voltage (VF)
  • No reverse recovery charge
  • Mild positive temperature dependency of VF
  • Best-in-class surge current capability
  • Excellent thermal performance

Benefits

  • Highest system efficiency
  • Improved system efficiency at low switching frequencies
  • Increased power density at high switching frequencies
  • Higher system reliability
  • Reduced EMI

Applications

  • 1-phase string inverter solutions
  • General purpose motor drive - variating frequency and voltage
  • Motor Control
  • Photovoltaic
  • Uninterruptible power supplies (UPS)

Designers who used this product also designed with


  • IKW40N65ES5 |
    IGBT discretes
  • IKQ40N120CH3 |
    IGBT discretes
  • IKW40N120H3 |
    IGBT discretes
  • IKW40N65ES5 |
    IGBT discretes
  • IKQ40N120CH3 |
    IGBT discretes
  • IKW40N120H3 |
    IGBT discretes
  • IKW40N65ES5 |
    IGBT discretes
  • IKQ40N120CH3 |
    IGBT discretes
  • IKW40N120H3 |
    IGBT discretes
Supplier's Site Datasheet
Diode and Rectifier 286-IDW10G120C5B
Revolutionary semiconductor material - Silicon Carbide Product overview: IDW10G120C5B from Infineon Technologies is a Diode and Rectifier for rectification, reverse-polarity protection, signal routing, surge suppression, and electronic circuit reliability. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include diode, rectifier, Schottky, switching diode, Diode and Rectifier, Diode Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 286-IDW10G120C5B can be used for catalog matching and distributor lookup.

Revolutionary semiconductor material - Silicon Carbide Product overview: IDW10G120C5B from Infineon Technologies is a Diode and Rectifier for rectification, reverse-polarity protection, signal routing, surge suppression, and electronic circuit reliability. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include diode, rectifier, Schottky, switching diode, Diode and Rectifier, Diode Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 286-IDW10G120C5B can be used for catalog matching and distributor lookup.

Supplier's Site
Diodes, Rectifiers - Arrays - IDW10G120C5B - 825712-IDW10G120C5B - Win Source Electronics
Laguna Hills, CA, United States
Diodes, Rectifiers - Arrays - IDW10G120C5B
825712-IDW10G120C5B
Diodes, Rectifiers - Arrays - IDW10G120C5B 825712-IDW10G120C5B
Manufacturer: Infineon Technologies Win Source Part Number: 825712-IDW10G120C5B Categories: Uncategorized Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 825712-IDW10G120C5B
Categories: Uncategorized
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Limited

Buy Now
1.2kV 1 pair of common cathodes 1.4V@5A 17A TO-247-3 SiC Diodes ROHS

1.2kV 1 pair of common cathodes 1.4V@5A 17A TO-247-3 SiC Diodes ROHS

Supplier's Site

Technical Specifications

  Infineon Technologies AG ERSAELECTRONICS PTE. LTD. Win Source Electronics ODG (Origin Data Global)
Product Category Schottky Diodes Rectifiers Diode Arrays Diodes
Product Number IDW10G120C5B 286-IDW10G120C5B 825712-IDW10G120C5B IDW10G120C5B
Product Name CoolSiC™ Schottky Diodes Diode and Rectifier Diodes, Rectifiers - Arrays - IDW10G120C5B Diodes
Life Cycle Stage active and preferred
Package TO-247; PG-TO247-3
RoHS Compliant RoHS RoHS
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