650 V silicon power diode in TO-220 real2pin package
Rapid 2 switching 650 V, 40 A emitter controlled power silicon diode in a TO-220 real2pin package is designed for applications switching between 40 kHz and 100 kHz.
Summary of Features
Lowest reverse recovery charge (Qrr): forward voltage (VF) ratio for BiC performance
Low reverse recovery time (trr)
Lowest Irrm to provide lowest turn-on losses on the boost switch
Applications
Power conversion
Uninterruptible power supplies (UPS)
Designers who used this product also designed with
IDW30G65C5 | CoolSiC™ Schottky Diodes
IKW40N65ES5 | IGBT discretes
IRS2186S | Gate driver ICs
IKW15N120H3 | IGBT discretes
IRFB4321 | N-Channel Power MOSFET
IDW30G65C5 | CoolSiC™ Schottky Diodes
IKW40N65ES5 | IGBT discretes
IRS2186S | Gate driver ICs
IKW15N120H3 | IGBT discretes
IRFB4321 | N-Channel Power MOSFET
IDW30G65C5 | CoolSiC™ Schottky Diodes
IKW40N65ES5 | IGBT discretes
IRS2186S | Gate driver ICs
1 2
650 V silicon power diode in TO-220 real2pin package
Rapid 2 switching 650 V, 40 A emitter controlled power silicon diode in a TO-220 real2pin package is designed for applications switching between 40 kHz and 100 kHz.
Summary of Features
- Lowest reverse recovery charge (Qrr): forward voltage (VF) ratio for BiC performance
- Low reverse recovery time (trr)
- Lowest Irrm to provide lowest turn-on losses on the boost switch
Applications
- Power conversion
- Uninterruptible power supplies (UPS)
Designers who used this product also designed with
- IDW30G65C5 |
CoolSiC™ Schottky Diodes
- IKW40N65ES5 |
IGBT discretes
- IRS2186S |
Gate driver ICs
- IKW15N120H3 |
IGBT discretes
- IRFB4321 |
N-Channel Power MOSFET
- IDW30G65C5 |
CoolSiC™ Schottky Diodes
- IKW40N65ES5 |
IGBT discretes
- IRS2186S |
Gate driver ICs
- IKW15N120H3 |
IGBT discretes
- IRFB4321 |
N-Channel Power MOSFET
- IDW30G65C5 |
CoolSiC™ Schottky Diodes
- IKW40N65ES5 |
IGBT discretes
- IRS2186S |
Gate driver ICs
1
2
