Infineon Technologies AG Silicon Diodes IDP15E65D2

Description
650 V silicon power diode in TO-220 real2pin package Rapid 2 switching 650 V, 15 A emitter controlled power silicon diode in a TO-220 real2pin package is designed for applications switching between 40 kHz and 100 kHz. Summary of Features Lowest reverse recovery charge (Qrr): forward voltage (VF) ratio for BiC performance Low reverse recovery time (trr) Lowest Irrm to provide lowest turn-on losses on the boost switch Applications Residential air conditioning: Smart (IoT) and efficient cooling Telecommunication infrastructure Uninterruptible power supplies (UPS) Designers who used this product also designed with IKW75N60T | IGBT discretes IRF100P219 | N-Channel Power MOSFET IKW40N120CS6 | IGBT discretes IPP65R060CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IRF630N | N-Channel Power MOSFET IKW75N60T | IGBT discretes IRF100P219 | N-Channel Power MOSFET IKW40N120CS6 | IGBT discretes IPP65R060CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IRF630N | N-Channel Power MOSFET IKW75N60T | IGBT discretes IRF100P219 | N-Channel Power MOSFET IKW40N120CS6 | IGBT discretes 1 2
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Description
650 V silicon power diode in TO-220 real2pin package Rapid 2 switching 650 V, 15 A emitter controlled power silicon diode in a TO-220 real2pin package is designed for applications switching between 40 kHz and 100 kHz. Summary of Features Lowest reverse recovery charge (Qrr): forward voltage (VF) ratio for BiC performance Low reverse recovery time (trr) Lowest Irrm to provide lowest turn-on losses on the boost switch Applications Residential air conditioning: Smart (IoT) and efficient cooling Telecommunication infrastructure Uninterruptible power supplies (UPS) Designers who used this product also designed with IKW75N60T | IGBT discretes IRF100P219 | N-Channel Power MOSFET IKW40N120CS6 | IGBT discretes IPP65R060CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IRF630N | N-Channel Power MOSFET IKW75N60T | IGBT discretes IRF100P219 | N-Channel Power MOSFET IKW40N120CS6 | IGBT discretes IPP65R060CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IRF630N | N-Channel Power MOSFET IKW75N60T | IGBT discretes IRF100P219 | N-Channel Power MOSFET IKW40N120CS6 | IGBT discretes 1 2
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Suppliers

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Silicon Diodes - IDP15E65D2 - Infineon Technologies AG
Neubiberg, Germany
Silicon Diodes
IDP15E65D2
Silicon Diodes IDP15E65D2
650 V silicon power diode in TO-220 real2pin package Rapid 2 switching 650 V, 15 A emitter controlled power silicon diode in a TO-220 real2pin package is designed for applications switching between 40 kHz and 100 kHz. Summary of Features Lowest reverse recovery charge (Qrr): forward voltage (VF) ratio for BiC performance Low reverse recovery time (trr) Lowest Irrm to provide lowest turn-on losses on the boost switch Applications Residential air conditioning: Smart (IoT) and efficient cooling Telecommunication infrastructure Uninterruptible power supplies (UPS) Designers who used this product also designed with IKW75N60T | IGBT discretes IRF100P219 | N-Channel Power MOSFET IKW40N120CS6 | IGBT discretes IPP65R060CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IRF630N | N-Channel Power MOSFET IKW75N60T | IGBT discretes IRF100P219 | N-Channel Power MOSFET IKW40N120CS6 | IGBT discretes IPP65R060CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IRF630N | N-Channel Power MOSFET IKW75N60T | IGBT discretes IRF100P219 | N-Channel Power MOSFET IKW40N120CS6 | IGBT discretes 1 2

650 V silicon power diode in TO-220 real2pin package

Rapid 2 switching 650 V, 15 A emitter controlled power silicon diode in a TO-220 real2pin package is designed for applications switching between 40 kHz and 100 kHz.


Summary of Features

  • Lowest reverse recovery charge (Qrr): forward voltage (VF) ratio for BiC performance
  • Low reverse recovery time (trr)
  • Lowest Irrm to provide lowest turn-on losses on the boost switch

Applications

  • Residential air conditioning: Smart (IoT) and efficient cooling
  • Telecommunication infrastructure
  • Uninterruptible power supplies (UPS)

Designers who used this product also designed with


  • IKW75N60T |
    IGBT discretes
  • IRF100P219 |
    N-Channel Power MOSFET
  • IKW40N120CS6 |
    IGBT discretes
  • IPP65R060CFD7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IRF630N |
    N-Channel Power MOSFET
  • IKW75N60T |
    IGBT discretes
  • IRF100P219 |
    N-Channel Power MOSFET
  • IKW40N120CS6 |
    IGBT discretes
  • IPP65R060CFD7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IRF630N |
    N-Channel Power MOSFET
  • IKW75N60T |
    IGBT discretes
  • IRF100P219 |
    N-Channel Power MOSFET
  • IKW40N120CS6 |
    IGBT discretes

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Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power Diodes
Product Number IDP15E65D2
Product Name Silicon Diodes
Configuration Single
RoHS Compliant RoHS
Package TO-220; PG-TO220-2
VF 1.6 volts
IF 15000 to 30000 mA
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