Infineon Technologies AG Silicon Diodes IDP15E65D1

Description
650 V silicon power diode in TO-220 real2pin package Rapid 1 switching 650 V, 15 A emitter controlled power silicon diodes in a TO-220 real2pin package is perfectly suited for Power Factor Correction (PFC) topologies, typically found in major home appliances such as air conditioners and washing machines. Summary of Features 1.35 V temperature-stable forward voltage (VF) Highest softness-factor for ultimate softness and low EMI filtering Lowest Irrm to provide low turn-on losses on the boost switch For applications switching between 18 kHz and 40 kHz Applications Home appliances Light electric vehicles (LEV) Uninterruptible power supplies (UPS) Designers who used this product also designed with IKW40N65ES5 | IGBT discretes IRS2186S | Gate driver ICs IKW15N120H3 | IGBT discretes IDP12E120 | Silicon Diodes IRFB4321 | N-Channel Power MOSFET IDW30G65C5 | CoolSiC™ Schottky Diodes IKW40N65ES5 | IGBT discretes IRS2186S | Gate driver ICs IKW15N120H3 | IGBT discretes IDP12E120 | Silicon Diodes IRFB4321 | N-Channel Power MOSFET IDW30G65C5 | CoolSiC™ Schottky Diodes IKW40N65ES5 | IGBT discretes IRS2186S | Gate driver ICs 1 2
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Description
650 V silicon power diode in TO-220 real2pin package Rapid 1 switching 650 V, 15 A emitter controlled power silicon diodes in a TO-220 real2pin package is perfectly suited for Power Factor Correction (PFC) topologies, typically found in major home appliances such as air conditioners and washing machines. Summary of Features 1.35 V temperature-stable forward voltage (VF) Highest softness-factor for ultimate softness and low EMI filtering Lowest Irrm to provide low turn-on losses on the boost switch For applications switching between 18 kHz and 40 kHz Applications Home appliances Light electric vehicles (LEV) Uninterruptible power supplies (UPS) Designers who used this product also designed with IKW40N65ES5 | IGBT discretes IRS2186S | Gate driver ICs IKW15N120H3 | IGBT discretes IDP12E120 | Silicon Diodes IRFB4321 | N-Channel Power MOSFET IDW30G65C5 | CoolSiC™ Schottky Diodes IKW40N65ES5 | IGBT discretes IRS2186S | Gate driver ICs IKW15N120H3 | IGBT discretes IDP12E120 | Silicon Diodes IRFB4321 | N-Channel Power MOSFET IDW30G65C5 | CoolSiC™ Schottky Diodes IKW40N65ES5 | IGBT discretes IRS2186S | Gate driver ICs 1 2
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Silicon Diodes - IDP15E65D1 - Infineon Technologies AG
Neubiberg, Germany
Silicon Diodes
IDP15E65D1
Silicon Diodes IDP15E65D1
650 V silicon power diode in TO-220 real2pin package Rapid 1 switching 650 V, 15 A emitter controlled power silicon diodes in a TO-220 real2pin package is perfectly suited for Power Factor Correction (PFC) topologies, typically found in major home appliances such as air conditioners and washing machines. Summary of Features 1.35 V temperature-stable forward voltage (VF) Highest softness-factor for ultimate softness and low EMI filtering Lowest Irrm to provide low turn-on losses on the boost switch For applications switching between 18 kHz and 40 kHz Applications Home appliances Light electric vehicles (LEV) Uninterruptible power supplies (UPS) Designers who used this product also designed with IKW40N65ES5 | IGBT discretes IRS2186S | Gate driver ICs IKW15N120H3 | IGBT discretes IDP12E120 | Silicon Diodes IRFB4321 | N-Channel Power MOSFET IDW30G65C5 | CoolSiC™ Schottky Diodes IKW40N65ES5 | IGBT discretes IRS2186S | Gate driver ICs IKW15N120H3 | IGBT discretes IDP12E120 | Silicon Diodes IRFB4321 | N-Channel Power MOSFET IDW30G65C5 | CoolSiC™ Schottky Diodes IKW40N65ES5 | IGBT discretes IRS2186S | Gate driver ICs 1 2

650 V silicon power diode in TO-220 real2pin package

Rapid 1 switching 650 V, 15 A emitter controlled power silicon diodes in a TO-220 real2pin package is perfectly suited for Power Factor Correction (PFC) topologies, typically found in major home appliances such as air conditioners and washing machines.


Summary of Features

  • 1.35 V temperature-stable forward voltage (VF)
  • Highest softness-factor for ultimate softness and low EMI filtering
  • Lowest Irrm to provide low turn-on losses on the boost switch
  • For applications switching between 18 kHz and 40 kHz

Applications

  • Home appliances
  • Light electric vehicles (LEV)
  • Uninterruptible power supplies (UPS)

Designers who used this product also designed with


  • IKW40N65ES5 |
    IGBT discretes
  • IRS2186S |
    Gate driver ICs
  • IKW15N120H3 |
    IGBT discretes
  • IDP12E120 |
    Silicon Diodes
  • IRFB4321 |
    N-Channel Power MOSFET
  • IDW30G65C5 |
    CoolSiC™ Schottky Diodes
  • IKW40N65ES5 |
    IGBT discretes
  • IRS2186S |
    Gate driver ICs
  • IKW15N120H3 |
    IGBT discretes
  • IDP12E120 |
    Silicon Diodes
  • IRFB4321 |
    N-Channel Power MOSFET
  • IDW30G65C5 |
    CoolSiC™ Schottky Diodes
  • IKW40N65ES5 |
    IGBT discretes
  • IRS2186S |
    Gate driver ICs

1
2

Supplier's Site Datasheet
Discrete Semiconductor Products - Diodes - Rectifiers - Single Diodes - 1367351-IDP15E65D1 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Diodes - Rectifiers - Single Diodes
1367351-IDP15E65D1
Discrete Semiconductor Products - Diodes - Rectifiers - Single Diodes 1367351-IDP15E65D1
Win Source Part Number: 1367351-IDP15E65D1 Category: Discrete Semiconductor Products - Diodes - Rectifiers - Single Diodes Fake Threat In the Open Market: 30 pct. MSL Level: 1 (Unlimited) Mfr: Infineon Technologies Package: Bulk Product Status: Active Package / Case: TO-220-2 Supplier Device Package: PG-TO220-2-1 Technology: Standard Mounting Type: Through Hole HTSUS: 8541.10.0080 REACH Status: REACH Unaffected ECCN: EAR99 Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 114 ns Current - Reverse Leakage @ Vr: 40 µA @ 650 V Operating Temperature - Junction: -40°C ~ 175°C

Win Source Part Number: 1367351-IDP15E65D1
Category: Discrete Semiconductor Products - Diodes - Rectifiers - Single Diodes
Fake Threat In the Open Market: 30 pct.
MSL Level: 1 (Unlimited)
Mfr: Infineon Technologies
Package: Bulk
Product Status: Active
Package / Case: TO-220-2
Supplier Device Package: PG-TO220-2-1
Technology: Standard
Mounting Type: Through Hole
HTSUS: 8541.10.0080
REACH Status: REACH Unaffected
ECCN: EAR99
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 114 ns
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Operating Temperature - Junction: -40°C ~ 175°C

Buy Now Datasheet
Single Diodes - IDP15E65D1 - ODG (Origin Data Global)
Shenzhen, China
Single Diodes
IDP15E65D1
Single Diodes IDP15E65D1
DIODE GP 650V 30A TO220-2-1

DIODE GP 650V 30A TO220-2-1

Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG Win Source Electronics ODG (Origin Data Global)
Product Category Power Diodes Diodes Diodes
Product Number IDP15E65D1 1367351-IDP15E65D1 IDP15E65D1
Product Name Silicon Diodes Discrete Semiconductor Products - Diodes - Rectifiers - Single Diodes Single Diodes
Configuration Single
RoHS Compliant RoHS
Package TO-220; PG-TO220-2
VF 1.35 volts 1.7 volts 1.7 volts
IF 15000 to 30000 mA
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