1200 V Silicion Carbide Schottky diode in a DPAK real2pin package
The CoolSiC™ Schottky diode generation 5 1200 V, 5 A in a DPAK real2pin package, presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already introduced with G2, is now combined with a new merged pn junction improving diode surge current capabilities. The result is a series of products delivering market leading efficiency and more system reliability at an attractive cost point.
Summary of Features
Best-in-class forward voltage (VF)
No reverse recovery charge
Mild positive temperature dependency of VF
Best-in-class surge current capability
Excellent thermal performance
Benefits
Highest system efficiency
Improved system efficiency at low switching frequencies
Increased power density at high switching frequencies
Higher system reliability
Reduced EMI
Applications
DIN rail power supplies
High voltage direct current (HVDC)
LED lighting system designs
Motor Control
Photovoltaic
1200 V Silicion Carbide Schottky diode in a DPAK real2pin package
The CoolSiC™ Schottky diode generation 5 1200 V, 5 A in a DPAK real2pin package, presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already introduced with G2, is now combined with a new merged pn junction improving diode surge current capabilities. The result is a series of products delivering market leading efficiency and more system reliability at an attractive cost point.
Summary of Features
- Best-in-class forward voltage (VF)
- No reverse recovery charge
- Mild positive temperature dependency of VF
- Best-in-class surge current capability
- Excellent thermal performance
Benefits
- Highest system efficiency
- Improved system efficiency at low switching frequencies
- Increased power density at high switching frequencies
- Higher system reliability
- Reduced EMI
Applications
- DIN rail power supplies
- High voltage direct current (HVDC)
- LED lighting system designs
- Motor Control
- Photovoltaic
